Opto Diode Corporation, an ITW company, announces the OD-110WISOLHT, a high-temperature, wide-angle infrared light-emitting diode (IRLED) specially designed for high-temperature applications, such as covert exterior aircraft lighting.

Opto Diode Corporation, an ITW company, introduces the OD-110LISOLHT, a high-power, gallium aluminum arsenide (GaAlAs) infrared light-emitting diode (IRLED) illuminator.  With a narrow angle of emission and a wide temperature rating, the new IR emitter is ideal for applications in industrial and defense/military tasks, such as exterior covert lighting on aircraft.

Opto Diode Corporation, an ITW company, introduces the UVG5S, an ultraviolet-enhanced photodiode with a 5 mm² circular active area. The new device is ideal for detection between 225 nm and 400 nm and features less than 2% response degradation after exposure to 7000J/cm2 at 254 nm. With 100% internal quantum efficiency from 200 nm to 365 nm, the UVG5S is ideal for laser power monitoring tasks and other high-energy detection applications.

Opto Diode Corporation, an ITW company, introduces the SXUV5, an extreme ultraviolet (EUV) photodiode with a circular active area of 2.5 mm diameter. The new device has superior responsivity in the 1 nm to 190 nm wavelength region, and is specially designed to be highly stable over long periods of time when exposed to high-intensity EUV energy.

Opto Diode Corporation, an ITW company, introduces the AXUV576C, a large square photodiode with a 576.5 mm² active area that is specially designed for electron and radiation detection. The new device is part of Opto Diode’s family of radiation detectors and offers electron detection to 200 eV. The square active area is configured on a round 4-pin package, with 2 anode pins and 2 cathode pins for added connection versatility.

At 2016’s Photonics West, Ray Fontayne provided us with a general overview of Opto Diode and the markets they serve.

Renee Dulfer walked us through a position detection system demo that Opto Diode had on display at DSS in 2015. Stick around for the whole thing, we promise the video’s title will make sense if you do.

Renee Dulfer spent some of day two of the exhibition with us giving us an overview of Opto Diode’s recent product expansion via of 2014 merger with CalSensors, but the real fun began when she walked us through their in-booth demonstration. For a better look on how their detectors are used in real world applications, check it out.

Opto Diode’s national sales manager Stan Duda kept us up to date on some new developments at Opto Diode. Watch the video to learn more about a new EUV compatible position sensing detector covering the 0.1 nm to 400 nm spectral range.

Stan Duda, national sales manager for ITW-Opto Diode, gives us some background on his company, a manufacturer of silicon photodiodes, LEDs, LED arrays, and UV/X-Ray photodetectors, at Photonics West 2013.

The OD-110LISOLHT is a high-power, GaAlAs infrared light-emitting diode (IRLED) illuminator. This device features a narrow angle of emission and a wide temperature rating for use in several industrial and defense/military applications, such as exterior covert lighting on an aircraft.

The AXUV300C photodiode from Opto Diode offers a large, 331 mm² rectangular active area with no window to allow for detection of energy shorter than 200 nm. Other features include a response time of 15 microseconds and electron detection as low as 200 eV.

The AXUV63HS1 high-speed photodetector is designed with a circular active area of 9 mm diameter and is ideally suited for electron detection. This detector features a typical rise time of 10 nsec, a minimum dark current of 100 nA, and a minimum reverse breakdown voltage of 160 V. Storage and operating temperatures range from -10 °C to +40 °C (ambient) and from -20 °C to +80 °C in nitrogen or vacuum environments.

The AXUV20A Circular Photodetectors are designed specifically for radiation, electron, and photon response in the ultraviolet (UV), extreme ultraviolet (EUV), through visible and near-infrared (IR) wavelength ranges. Each circular diode has an active area of a 5.5 mm diameter with excellent sensitivity to low energy electrons.

The AXUV100TF400 is a directly-deposited thin-film filter photodetector featuring 100 mm² square active area for extreme ultraviolet (EUV) detection. The device is designed for use in detecting solar EUV radiation, soft x-ray radiometry, x-ray and EUV lithography, x-ray microscopy and extreme vacuum ultraviolet (XUV) spectroscopy. The AXU100TF400 features typical responsivity of 0.15 A/W at 40 nm with a detection range from 18 nm to 80 nm.