ABOUT OPTO DIODE CORPORATION

Opto Diode Corporation (www.optodiode.com) based in Camarillo, California has a long history of delivering industry-leading photodetectors and LEDs. Available in standard and custom designs, Opto Diode products have supported the photonics industry for over 30 years and earned a reputation for high performance, superior quality and reliability. With the acquisition of International Radiation Detectors (IRD) and the merger of Cal Sensors (CSI), Opto Diode now offers industry-leading performance detectors from the extreme UV to the mid-infrared (mid-IR) regions of the electromagnetic spectrum. The IRD product line detects high energy particles and photons in the UV and X-ray regions.  The CSI detectors provide superior sensitivity to discriminate trace gases or detect heat, sparks or flames in the mid-IR spectrum. 

Complemented by high performance LEDs with radiometric emissions from 365 to 940 nm and IR emitters covering 1 to 10 microns, Opto Diode supports your measurement needs from prototyping to high volume production.  All products are designed and manufactured in the US.  The Opto Diode facility is optimized for manufacturing with on-site wafer fabrication, class 1,000 to 10,000 clean rooms, extensive assembly capabilities and packaging expertise, delivering the products you need to fulfill your design requirements.  Applying rigorous quality control standards, Opto Diode serves a variety of industries including: medical, test & measurement, military/defense, biotechnology, R&D, entertainment, industrial, aerospace and automotive.  For more information, visit www.optodiode.com.

PRODUCTS

Opto Diode introduces the OD-110LISOLHT as a high-power, GaAlAs infrared light-emitting diode (IRLED) illuminator. This device features a narrow angle of emission and a wide temperature rating for use in several industrial and defense/military applications, such as exterior covert lighting on an aircraft.

The AXUV300C photodiode from Opto Diode offers a large, 331 mm2 rectangular active area with no window to allow for detection of energy shorter than 200 nm. Other features include a response time of 15 microseconds and electron detection as low as 200 eV.

Opto Diode introduces the AXUV63HS1 as part of their family of AXUV detectors featuring high-performance measurement of electrons, photons, or X-rays. This high-speed photodetector is designed with a circular active area of 9 mm diameter and is ideally suited for electron detection.

Opto Diode introduces the AXUV20A Circular Photodetectors designed specifically for radiation, electron, and photon response in the ultraviolet (UV), extreme ultraviolet (EUV), through visible and near-infrared (IR) wavelength ranges. Each circular diode has an active area of a 5.5 mm diameter with excellent sensitivity to low energy electrons.

Opto Diode’s new NXIR-5C is a red to near-infrared (NIR) enhanced photodiode ideally designed for laser monitoring, medical diagnostic equipment, industrial automation, scientific measurement, and military applications. The photodiode features a circular active area of 5 mm2, and delivers spectral response from 320 nm to 100 nm.

Opto Diode introduces two new 13.5 nm directly-deposited thin-film filter photodetectors ideal for electrical performance in many applications, including laser power monitoring, semiconductor photolithography, and metrology systems that utilize extreme ultraviolet light. The SXUV100TF135 and SXUV100TF135B feature a 100 mm2 active area, detection capabilities between 12 nm and 18 nm, and a responsivity of 0.09 A/W at 13.5 nm.

Opto Diode now offers the new BXT2-17TF single-channel infrared (IR) detector designed to provide excellent sensitivity for industrial carbon monoxide (CO) detection in harsh environments. With an integrated 4.67 µm optical bandpass silicon filter and a thermistor, this thermoelectrically-cooled device features excellent performance and high reliability for long life use.

Opto Diode introduces the NXIR-RF100C as a red and near-infrared (NIR) surface-mount device (SMD) photodiode with spectral response ranging from 320 to 1100 nm. The device package is ideally designed for laser-monitoring, and rain- and sun-sensor applications in the -40 °C to +125 °C temperature range.

Opto Diode's OD-685C -- a new deep red, surface-mount device (SMD) light-emitting diode (LED) -- features 2.0 mW of radiant power at a forward current of 20 mA, a peak wavelength of 685 nm, and a radiant efficiency of 56 percent. The LED is designed to deliver outstanding efficiency for applications requiring radiometric measurement with tight spectral bandwidth, including science, medical, and veterinary applications.

The SXUV20C is a new low-noise extreme ultraviolet (EUV) photodetector that is specially designed for high stability over long periods of time when exposed to high intensity EUV energy. The photodetector features superior responsivity in the 1 nm to 200 nm wavelength region, a large 20 mm2 circular active area that provides a substantial surface for easy alignment to the EUV laser, and superior hardness in extreme UV environments.

Opto Diode's new series of near-infrared (NIR) detectors are designed for back-facet laser monitoring applications that require improved performance in the NIR spectrum from 700 nm to 1100 nm. These new photodiodes maximize measurement repeatability and offer a low-cost solution for NIR wavebands.

The new OD-850WHT is a wide temperature range infrared (IR) emitter from Opto Diode designed to simplify thermal design for night vision, aircraft, and vehicle light markers for covert operations in military applications. These emitters also have thermal improvements ideal for high temperature industrial photoelectric controls used in petroleum refining, chemical processing, and power generation and other industrial applications.

CONTACT INFORMATION

Opto Diode, An ITW Company

1260 Calle Suerte

Camarillo, CA 93012

UNITED STATES

Phone: 805-499-0335

Fax: 805-499-8108

Contact: Russell Dahl

NEWS

  • Opto Diode’s High-Temperature Infrared LED With Wide Angle Of Emission

    Opto Diode Corporation, an ITW company, announces the OD-110WISOLHT, a high-temperature, wide-angle infrared light-emitting diode (IRLED) specially designed for high-temperature applications, such as covert exterior aircraft lighting.

  • Opto Diode Introduces A High-Temperature Infrared Emitter With Narrow Angle Of Emission

    Opto Diode Corporation, an ITW company, introduces the OD-110LISOLHT, a high-power, gallium aluminum arsenide (GaAlAs) infrared light-emitting diode (IRLED) illuminator.  With a narrow angle of emission and a wide temperature rating, the new IR emitter is ideal for applications in industrial and defense/military tasks, such as exterior covert lighting on aircraft.

  • Opto Diode Introduces An Ultraviolet-Enhanced Circular Photodetector

    Opto Diode Corporation, an ITW company, introduces the UVG5S, an ultraviolet-enhanced photodiode with a 5 mm² circular active area. The new device is ideal for detection between 225 nm and 400 nm and features less than 2% response degradation after exposure to 7000J/cm2 at 254 nm. With 100% internal quantum efficiency from 200 nm to 365 nm, the UVG5S is ideal for laser power monitoring tasks and other high-energy detection applications.

  • Opto Diode Introduces An Extreme Ultraviolet (EUV) Photodetector – SXUV5

    Opto Diode Corporation, an ITW company, introduces the SXUV5, an extreme ultraviolet (EUV) photodiode with a circular active area of 2.5 mm diameter. The new device has superior responsivity in the 1 nm to 190 nm wavelength region, and is specially designed to be highly stable over long periods of time when exposed to high-intensity EUV energy.

  • Opto Diode Introduces AXUV576C, A Large Square Photodiode For Radiation Detection

    Opto Diode Corporation, an ITW company, introduces the AXUV576C, a large square photodiode with a 576.5 mm² active area that is specially designed for electron and radiation detection. The new device is part of Opto Diode’s family of radiation detectors and offers electron detection to 200 eV. The square active area is configured on a round 4-pin package, with 2 anode pins and 2 cathode pins for added connection versatility.

VIDEOS

  • Design Challenge Accepted

    At 2016’s Photonics West, Ray Fontayne provided us with a general overview of Opto Diode and the markets they serve.

  • Avoid Getting Shot!

    Renee Dulfer walked us through a position detection system demo that Opto Diode had on display at DSS in 2015. Stick around for the whole thing, we promise the video’s title will make sense if you do.

  • The Little Train That Couldn’t Derail

    Renee Dulfer spent some of day two of the exhibition with us giving us an overview of Opto Diode’s recent product expansion via of 2014 merger with CalSensors, but the real fun began when she walked us through their in-booth demonstration. For a better look on how their detectors are used in real world applications, check it out.

  • New Detector For Beam Position Monitoring, UV Scanners, And Inspection Tools

    Opto Diode’s national sales manager Stan Duda kept us up to date on some new developments at Opto Diode. Watch the video to learn more about a new EUV compatible position sensing detector covering the 0.1 nm to 400 nm spectral range.

  • Industry’s First EUV-Compatible Position Sensing Detector

    Stan Duda, national sales manager for ITW-Opto Diode, gives us some background on his company, a manufacturer of silicon photodiodes, LEDs, LED arrays, and UV/X-Ray photodetectors, at Photonics West 2013.

DOWNLOADS

  • High-Temperature Infrared Emitter With Narrow Angle Of Emission: OD-110LISOLHT Datasheet

    The OD-110LISOLHT is a high-power, GaAlAs infrared light-emitting diode (IRLED) illuminator. This device features a narrow angle of emission and a wide temperature rating for use in several industrial and defense/military applications, such as exterior covert lighting on an aircraft.

  • Rectangular Photodiode For Electron Detection: AXUV300C Datasheet

    The AXUV300C photodiode from Opto Diode offers a large, 331 mm2 rectangular active area with no window to allow for detection of energy shorter than 200 nm. Other features include a response time of 15 microseconds and electron detection as low as 200 eV.

  • High-Speed, 9 mm² Circular Photodiode For Electron Detection: AXUV63HS1 Datasheet

    The AXUV63HS1 high-speed photodetector is designed with a circular active area of 9 mm diameter and is ideally suited for electron detection. This detector features a typical rise time of 10 nsec, a minimum dark current of 100 nA, and a minimum reverse breakdown voltage of 160 V. Storage and operating temperatures range from -10 °C to +40 °C (ambient) and from -20 °C to +80 °C in nitrogen or vacuum environments.

  • 5 mm2 Circular Photodiodes For Radiation Detection: AXUV20A Series Datasheet

    The AXUV20A Circular Photodetectors are designed specifically for radiation, electron, and photon response in the ultraviolet (UV), extreme ultraviolet (EUV), through visible and near-infrared (IR) wavelength ranges. Each circular diode has an active area of a 5.5 mm diameter with excellent sensitivity to low energy electrons.

  • Directly-Deposited Thin-Film Filter Photodetectors: AXUV100TF400 Datasheet

    The AXUV100TF400 is a directly-deposited thin-film filter photodetector featuring 100 mm2 square active area for extreme ultraviolet (EUV) detection. The device is designed for use in detecting solar EUV radiation, soft x-ray radiometry, x-ray and EUV lithography, x-ray microscopy and extreme vacuum ultraviolet (XUV) spectroscopy. The AXU100TF400 features typical responsivity of 0.15 A/W at 40 nm with a detection range from 18 nm to 80 nm.