ABOUT OPTO DIODE CORPORATION

Opto Diode Corporation (www.optodiode.com) based in Camarillo, California has a long history of delivering industry-leading photodetectors and LEDs. Available in standard and custom designs, Opto Diode products have supported the photonics industry for over 30 years and earned a reputation for high performance, superior quality and reliability. With the acquisition of International Radiation Detectors (IRD) and the merger of Cal Sensors (CSI), Opto Diode now offers industry-leading performance detectors from the extreme UV to the mid-infrared (mid-IR) regions of the electromagnetic spectrum. The IRD product line detects high energy particles and photons in the UV and X-ray regions.  The CSI detectors provide superior sensitivity to discriminate trace gases or detect heat, sparks or flames in the mid-IR spectrum. 

Complemented by high performance LEDs with radiometric emissions from 365 to 940 nm and IR emitters covering 1 to 10 microns, Opto Diode supports your measurement needs from prototyping to high volume production.  All products are designed and manufactured in the US.  The Opto Diode facility is optimized for manufacturing with on-site wafer fabrication, class 1,000 to 10,000 clean rooms, extensive assembly capabilities and packaging expertise, delivering the products you need to fulfill your design requirements.  Applying rigorous quality control standards, Opto Diode serves a variety of industries including: medical, test & measurement, military/defense, biotechnology, R&D, entertainment, industrial, aerospace and automotive.  For more information, visit www.optodiode.com.

PRODUCTS

Red To Near-IR Enhanced Surface-Mount Photodiode: NXIR-5C Red To Near-IR Enhanced Surface-Mount Photodiode: NXIR-5C

Opto Diode’s new NXIR-5C is a red to near-infrared (NIR) enhanced photodiode ideally designed for laser monitoring, medical diagnostic equipment, industrial automation, scientific measurement, and military applications. The photodiode features a circular active area of 5 mm2, and delivers spectral response from 320 nm to 100 nm.

13.5 nm Directly-Deposited Thin-Film Filter Photodetectors 13.5 nm Directly-Deposited Thin-Film Filter Photodetectors

Opto Diode introduces two new 13.5 nm directly-deposited thin-film filter photodetectors ideal for electrical performance in many applications, including laser power monitoring, semiconductor photolithography, and metrology systems that utilize extreme ultraviolet light. The SXUV100TF135 and SXUV100TF135B feature a 100 mm2 active area, detection capabilities between 12 nm and 18 nm, and a responsivity of 0.09 A/W at 13.5 nm.

Single-Channel, Two-Stage, Cooled Infrared (IR) Detector: BXT2-17TF Single-Channel, Two-Stage, Cooled Infrared (IR) Detector: BXT2-17TF

Opto Diode now offers the new BXT2-17TF single-channel infrared (IR) detector designed to provide excellent sensitivity for industrial carbon monoxide (CO) detection in harsh environments. With an integrated 4.67 µm optical bandpass silicon filter and a thermistor, this thermoelectrically-cooled device features excellent performance and high reliability for long life use.

Near-Infrared Surface-Mount Photodiode: NXIR-RF100C Near-Infrared Surface-Mount Photodiode: NXIR-RF100C

Opto Diode introduces the NXIR-RF100C as a red and near-infrared (NIR) surface-mount device (SMD) photodiode with spectral response ranging from 320 to 1100 nm. The device package is ideally designed for laser-monitoring, and rain- and sun-sensor applications in the -40 °C to +125 °C temperature range.

Deep Red Surface-Mount LED: OD-685C Deep Red Surface-Mount LED: OD-685C

Opto Diode presents the OD-685C, a new deep red, surface-mount device (SMD) light-emitting diode (LED). This new device features 2.0 mW of radiant power at a forward current of 20 mA, a peak wavelength of 685 nm, and a radiant efficiency of 56 percent. The LED is designed to deliver outstanding efficiency for applications requiring radiometric measurement with tight spectral bandwidth such as biological analysis, health, science, medical, and veterinary applications.

Low-Noise Extreme Ultraviolet (EUV) Photodetector Low-Noise Extreme Ultraviolet (EUV) Photodetector

The SXUV20C is a new low-noise extreme ultraviolet (EUV) photodetector that is specially designed for high stability over long periods of time when exposed to high intensity EUV energy. The photodetector features superior responsivity in the 1 nm to 200 nm wavelength region, a large 20 mm2 circular active area that provides a substantial surface for easy alignment to the EUV laser, and superior hardness in extreme UV environments.

Near-Infrared Detectors Near-Infrared Detectors

Opto Diode's new series of near-infrared (NIR) detectors are designed for back-facet laser monitoring applications that require improved performance in the NIR spectrum from 700 nm to 1100 nm. These new photodiodes maximize measurement repeatability and offer a low-cost solution for NIR wavebands.

Wide Temperature Range Infrared Emitter: OD-850WHT Wide Temperature Range Infrared Emitter: OD-850WHT

The new OD-850WHT is a wide temperature range infrared (IR) emitter from Opto Diode designed to simplify thermal design for night vision, aircraft, and vehicle light markers for covert operations in military applications. These emitters also have thermal improvements ideal for high temperature industrial photoelectric controls used in petroleum refining, chemical processing, and power generation and other industrial applications.

13mm<sup>2</sup> Photodiode: UVG12 13mm2 Photodiode: UVG12

The new UVG12 from Opto Diode is a 13mm2 photodiode specifically designed for detection between 193 nm and 400nm at 100 percent internal quantum efficiency in the UV and visible regions. Ideal applications for these devices include laser power monitoring, photolithography, and other high powered density applications using ultraviolet light.

High-Powered GaAlAs Near-Infrared Emitter: OD-110W High-Powered GaAlAs Near-Infrared Emitter: OD-110W

The OD-110W GaAlAs near-infrared (IR) emitter features uniform optical beams with a typical peak emission wavelength of 850 nm, an optical output of 140mW, a chip size of 0.026 in. x 0.026 in., and gold plating on all surfaces. These near-IR light-emitting diodes (near-IRLEDS) are designed for high-powered night vision and surveillance applications...

IR Detectors for Minimizing Out-Of-Band Radiation: SCD-B Series IR Detectors for Minimizing Out-Of-Band Radiation: SCD-B Series

Lead salt detectors were first used for infrared imaging applications in military research during the 1930s. Since their introduction, they’ve proven to be an effective infrared photodetector for a wide range of analysis, spectroscopy, high-speed infrared imaging, and defense applications. They’re not without their shortcomings, however.

Repeatability and Reliability in UV Laser Systems: SXUV300C Photodiode Repeatability and Reliability in UV Laser Systems: SXUV300C Photodiode

Opto Diode’s SXUV300C is a photodiode with a 331 mm2 active area and the ability to detect energy from UV wavelengths of 1 nm to 1000 nm. It’s been designed to maximize measurement repeatability and reliability in new or existing high-powered UV laser monitoring systems.

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CONTACT INFORMATION

Opto Diode, An ITW Company

1260 Calle Suerte

Camarillo, CA 93012

UNITED STATES

Phone: 805-499-0335

Fax: 805-499-8108

Contact: Russell Dahl

NEWS

  • Opto Diode Introduces 13.5 nm Directly-Deposited  Thin-Film Filter Photodetectors
    Opto Diode Introduces 13.5 nm Directly-Deposited Thin-Film Filter Photodetectors

    Opto Diode Corporation, an ITW company, introduces the SXUV100TF135 and SXUV100TF135B photodiodes with integrated thin-film filters. The detectors each feature a 100 mm2 active area and a directly-deposited thin-film filter for detection between 12 nm and 18 nm. Both detectors have typical responsivity of 0.09 A/W at 13.5 nm and are optimized for different electrical performance. The photodiodes are ideal for use in applications such as laser power monitoring, semiconductor photolithography, and metrology systems that utilize extreme ultraviolet light.

  • Opto Diode Presents BXT2-17TF - Two-Stage, Cooled,  Packaged Infrared (IR) Detector
    Opto Diode Presents BXT2-17TF - Two-Stage, Cooled, Packaged Infrared (IR) Detector

    Opto Diode Corporation, an ITW company, presents the BXT2-17TF, a single-channel, infrared (IR) detector with an integrated 4.67 µm optical bandpass silicon filter. The high-performance lead selenide (PbSe) cooled device provides excellent sensitivity for industrial carbon monoxide (CO) detection in harsh environments.

  • Opto Diode’s New NXIR-5C: Red To Near-IR Enhanced  Surface-Mount Photodiode
    Opto Diode’s New NXIR-5C: Red To Near-IR Enhanced Surface-Mount Photodiode

    Opto Diode Corporation recently introduced the NXIR-5C, a red to near-infrared (NIR) enhanced photodiode with a circular active area of 5 mm2. With a spectral response from 320 nm to 1100 nm, the rugged photodiode is housed in a custom 4.7 mm x 4.9 mm ceramic carrier surface-mount device (SMD) package. The new SMD joins the company’s popular NXIR family of products that is optimized for the near-infrared spectrum. 

  • Opto Diode Introduces Near-Infrared, Surface-Mount Detector
    Opto Diode Introduces Near-Infrared, Surface-Mount Detector

    Opto Diode Corporation introduces the NXIR-RF100C, a red and near-infrared (NIR) enhanced, reduced-footprint, surface-mount device (SMD) photodiode showcased at SPIE’s Photonics West 2017, San Francisco, Jan. 31- Feb. 2 in Opto Diode’s booth # 5628.

  • Opto Diode Introduces Deep Red Surface-Mount LED
    Opto Diode Introduces Deep Red Surface-Mount LED

    Opto Diode Corporation, an ITW company, introduces a deep red, surface-mount device (SMD) light-emitting diode (LED) that delivers exceptional efficiency for biological analysis, health, science, medical, and veterinary applications. OD-685C LED features 2.0mW of radiant power at a forward current of 20mA, peak wavelength of 685nm, and radiant efficiency of 56 percent. Typical applications require radiometric measurement with tight spectral bandwidth.

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VIDEOS

  • Design Challenge Accepted
    Design Challenge Accepted

    At 2016’s Photonics West, Ray Fontayne provided us with a general overview of Opto Diode and the markets they serve.

  • Avoid Getting Shot!
    Avoid Getting Shot!

    Renee Dulfer walked us through a position detection system demo that Opto Diode had on display at DSS in 2015. Stick around for the whole thing, we promise the video’s title will make sense if you do.

  • The Little Train That Couldn’t Derail
    The Little Train That Couldn’t Derail

    Renee Dulfer spent some of day two of the exhibition with us giving us an overview of Opto Diode’s recent product expansion via of 2014 merger with CalSensors, but the real fun began when she walked us through their in-booth demonstration. For a better look on how their detectors are used in real world applications, check it out.

  • New Detector For Beam Position Monitoring, UV Scanners, And Inspection Tools
    New Detector For Beam Position Monitoring, UV Scanners, And Inspection Tools

    Opto Diode’s national sales manager Stan Duda kept us up to date on some new developments at Opto Diode. Watch the video to learn more about a new EUV compatible position sensing detector covering the 0.1 nm to 400 nm spectral range.

  • Industry’s First EUV-Compatible Position Sensing Detector
    Industry’s First EUV-Compatible Position Sensing Detector

    Stan Duda, national sales manager for ITW-Opto Diode, gives us some background on his company, a manufacturer of silicon photodiodes, LEDs, LED arrays, and UV/X-Ray photodetectors, at Photonics West 2013.

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DOWNLOADS

  • Red To Near-IR Enhanced Surface-Mount Photodiode: NXIR-5C Datasheet

    The NXIR-5C is a red to near-infrared (NIR) enhanced photodiode ideally designed for laser monitoring, medical diagnostic equipment, industrial automation, scientific measurement, and military applications. The NXIR-5C delivers low reverse bias, high sensitivity at 0.62 A/W @ 850 nm and 0.35 A/W at 1064 nm, low dark current at 1nA, low capacitance of 5 pico-farads (pF) at 10 V, and high shunt resistance greater than 100 MΩ.

  • 13.5 nm Directly-Deposited Thin-Film Filter Photodetectors: SXUV100TF135B Datasheet

    The new SXUV100TF135B 13.5 nm is a directly-deposited thin-film filter photodetectors ideal for electrical performance in many applications, including laser power monitoring, semiconductor photolithography, and metrology systems that utilize extreme ultraviolet light. The SXUV100TF135B is optimized for zero bias voltage operation where low dark current is vital, and it features a high shunt resistance greater than 10 MΩ. It offers excellent stability and robust design for use in extreme ultraviolet environments.

  • 13.5 nm Directly-Deposited Thin-Film Filter Photodetectors: SXUV100TF135 Datasheet

    The new SXUV100TF135 13.5 nm is a directly-deposited thin-film filter photodetectors ideal for electrical performance in many applications, including laser power monitoring, semiconductor photolithography, and metrology systems that utilize extreme ultraviolet light. The SXUV100TF135 is optimized for higher speed reverse bias voltage operation, and features low capacitance at 260 pF with a reverse bias voltage of 12 V. It offers excellent stability and robust design for use in extreme ultraviolet environments.

  • Single-Channel, Two-Stage, Cooled Infrared (IR) Detector: BXT2-17TF Brochure

    Opto Diode offers a range of high performance lead selenide (PbSe) single-channel uncooled and cooled infrared detectors. These B Series IR detectors offer the best balance of performance and attributes for analyzing materials in the one to five micron spectrum. Key features include high signal to noise performance for a wide measurement dynamic range, high sensitivity, and fast response times for mid-IR applications.

  • Near-Infrared Surface-Mount Photodiode: NXIR-RF100C Datasheet

    The NXIR-RF100C is a red and near-infrared (NIR) surface-mount device (SMD) photodiode with spectral response ranging from 320 to 1100 nm. The NXIR-RF100C features an active area of 1 mm2, high responsivity of 0.62 A/W @ 850 nm and 0.35 A/W @ 1064 nm, and an anti-reflective (AR) coated window that provides greater than 98 percent transmission. The device package is ideally designed for laser-monitoring, and rain- and sun-sensor applications in the -40 °C to +125 °C temperature range.

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