The OD-110WISOLHT is a high-temperature, wide-angle infrared light-emitting diode (IRLED) specially designed for high-temperature applications, such as covert exterior aircraft lighting. The device features a peak emission wavelength of 880 nm and total power output ranging from 60 mW (minimum) up to 120 mW (typical). 

The OD-663-850 is a gallium aluminum arsenide (GaAlAs) near-infrared (IR) LED illuminator with ultra-high-power output, the OD-663-850. Specially designed for use in surveillance and night vision applications, the device has a very uniform optical beam with a peak emission wavelength of 850 nm.

The high-power gallium aluminum arsenide (GaAlAs) IRLED illuminator features a peak emission of 880 nm with an extremely wide angle of emission. Designed with nine chips connected in series, the robust device is housed in an electrically-isolated case, making it ideal for covert aircraft lighting or covert anti-collision lighting in aviation applications.

Opto Diode Corporation introduces a high-performance, two-stage, cooled, lead selenide (PbSe) detector that operates in the mid-infrared (IR) spectral region with peak sensitivity between 4.3 and 4.5µm. The cooler on the BXT2S-28T allows the detector element to operate as low as -45 °C to maximize detectivity (D*). The device also features excellent responsivity of 7.5 x 104 V/W (typical). The exceptionally reliable detector provides the highest sensitivity when monitoring small changes in gas mixtures.

Opto Diode presents a new, two-stage, cooled, lead selenide (PbSe) detector that operates in the mid-infrared (IR) spectral region with peak sensitivity between 4.3 and 4.5µm. The cooler on the BXT2S-28T allows the detector element to operate as low as -45 °C to maximize detectivity (D*).

The IR Detectors (B Series) from Opto Diode are high-performance lead selenide (PbSe) single-channel, cooled, and uncooled devices. Applications for these detectors include gas analysis, emissions monitoring, spectroscopy, thermal imaging, defense, security, and process control systems. 

Opto Diode offers a new ultraviolet-enhanced detector featuring UV detection between 190 nm and 400 nm spectral wavelength, with a full spectrum of 190 nm out of 1000 nm. The device features stable responsivity over wide temperature ranges and 100% internal quantum efficiency from 200 to 400 nm.

Opto Diode introduces the OD-110LISOLHT as a high-power, GaAlAs infrared light-emitting diode (IRLED) illuminator. This device features a narrow angle of emission and a wide temperature rating for use in several industrial and defense/military applications, such as exterior covert lighting on an aircraft.

The AXUV300C photodiode from Opto Diode offers a large, 331 mm² rectangular active area with no window to allow for detection of energy shorter than 200 nm. Other features include a response time of 15 microseconds and electron detection as low as 200 eV.

Opto Diode introduces the AXUV63HS1 as part of their family of AXUV detectors featuring high-performance measurement of electrons, photons, or X-rays. This high-speed photodetector is designed with a circular active area of 9 mm diameter and is ideally suited for electron detection.

Opto Diode AXUV20A circular photodetectors are designed specifically for radiation, electron, and photon response in the UV, extreme ultraviolet (EUV), through visible, and NIR wavelength ranges. Each circular diode has an active area of a 5.5 mm diameter with excellent sensitivity to low energy electrons.

Opto Diode’s new NXIR-5C is a red to near-infrared (NIR) enhanced photodiode ideally designed for laser monitoring, medical diagnostic equipment, industrial automation, scientific measurement, and military applications. The photodiode features a circular active area of 5 mm², and delivers spectral response from 320 nm to 100 nm.