Opto Diode Products

  1. Red To Near-IR Enhanced Surface-Mount Photodiode: NXIR-5C
    1/22/2018

    Opto Diode’s new NXIR-5C is a red to near-infrared (NIR) enhanced photodiode ideally designed for laser monitoring, medical diagnostic equipment, industrial automation, scientific measurement, and military applications. The photodiode features a circular active area of 5 mm2, and delivers spectral response from 320 nm to 100 nm.

  2. Photodetectors With Integrated, Directly-Deposited Thin-Film Filters
    1/19/2018

    Opto Diode introduces two new 13.5 nm directly-deposited thin-film filter photodetectors ideal for electrical performance in many applications, including laser power monitoring, semiconductor photolithography, and metrology systems that utilize extreme ultraviolet light. The SXUV100TF135 and SXUV100TF135B feature a 100 mm2 active area, detection capabilities between 12 nm and 18 nm, and a responsivity of 0.09 A/W at 13.5 nm.

  3. Single-Channel, Two-Stage, Cooled Infrared (IR) Detector: BXT2-17TF
    10/19/2017

    Opto Diode now offers the new BXT2-17TF single-channel infrared (IR) detector designed to provide excellent sensitivity for industrial carbon monoxide (CO) detection in harsh environments. With an integrated 4.67 µm optical bandpass silicon filter and a thermistor, this thermoelectrically-cooled device features excellent performance and high reliability for long life use.

  4. Near-Infrared Surface-Mount Photodiode: NXIR-RF100C
    2/2/2017

    Opto Diode introduces the NXIR-RF100C as a red and near-infrared (NIR) surface-mount device (SMD) photodiode with spectral response ranging from 320 to 1100 nm. The device package is ideally designed for laser-monitoring, and rain- and sun-sensor applications in the -40 °C to +125 °C temperature range.

  5. Deep Red Surface-Mount LED: OD-685C
    1/24/2017

    Opto Diode presents the OD-685C, a new deep red, surface-mount device (SMD) light-emitting diode (LED). This new device features 2.0 mW of radiant power at a forward current of 20 mA, a peak wavelength of 685 nm, and a radiant efficiency of 56 percent. The LED is designed to deliver outstanding efficiency for applications requiring radiometric measurement with tight spectral bandwidth such as biological analysis, health, science, medical, and veterinary applications.

  6. Low-Noise Extreme Ultraviolet (EUV) Photodetector
    10/12/2016

    The SXUV20C is a new low-noise extreme ultraviolet (EUV) photodetector that is specially designed for high stability over long periods of time when exposed to high intensity EUV energy. The photodetector features superior responsivity in the 1 nm to 200 nm wavelength region, a large 20 mm2 circular active area that provides a substantial surface for easy alignment to the EUV laser, and superior hardness in extreme UV environments.

  7. Near-Infrared Detectors
    2/24/2016

    Opto Diode's new series of near-infrared (NIR) detectors are designed for back-facet laser monitoring applications that require improved performance in the NIR spectrum from 700 nm to 1100 nm. These new photodiodes maximize measurement repeatability and offer a low-cost solution for NIR wavebands.

  8. Wide Temperature Range Infrared Emitter: OD-850WHT
    9/23/2015

    The new OD-850WHT is a wide temperature range infrared (IR) emitter from Opto Diode designed to simplify thermal design for night vision, aircraft, and vehicle light markers for covert operations in military applications. These emitters also have thermal improvements ideal for high temperature industrial photoelectric controls used in petroleum refining, chemical processing, and power generation and other industrial applications.

  9. 13mm2 Photodiode: UVG12
    8/21/2015

    The new UVG12 from Opto Diode is a 13mm2 photodiode specifically designed for detection between 193 nm and 400nm at 100 percent internal quantum efficiency in the UV and visible regions. Ideal applications for these devices include laser power monitoring, photolithography, and other high powered density applications using ultraviolet light.

  10. High-Powered GaAlAs Near-Infrared Emitter: OD-110W
    7/13/2015

    The OD-110W GaAlAs near-infrared (IR) emitter features uniform optical beams with a typical peak emission wavelength of 850 nm, an optical output of 140mW, a chip size of 0.026 in. x 0.026 in., and gold plating on all surfaces. These near-IR light-emitting diodes (near-IRLEDS) are designed for high-powered night vision and surveillance applications...