Super High-Power GaAlAs IR Emitters - OD-110W

Housed in a robust TO-39 hermetic package, this device features a compact chip size of 0.026" x 0.026" and incorporates four wire bonds at the die corners to ensure high durability and performance consistency.

One of the standout features of the OD-110W is its ultra-high optical output, delivering between 80 to 140 mW of power at a forward current of 500 mA. It emits light at a peak wavelength of 850 nm, with a spectral bandwidth of 40 nm at 50% intensity, and provides a wide 110-degree beam angle. These characteristics make it ideal for applications requiring broad, uniform IR illumination.

The emitter also offers excellent electrical performance, with a forward voltage between 1.7 and 2.0 volts, and fast rise and fall times of 20 nanoseconds, supporting high-speed applications. The OD-110W operates effectively across a wide temperature range of -40°C to 100°C, with a maximum junction temperature of 100°C and a power dissipation limit of 1000 mW.

Thermal resistance is specified under both still-air and forced-air conditions to help ensure optimal heat management. The emitter's gold-plated surfaces enhance conductivity and longevity, and users are advised to connect the two anode pins externally.

In summary, the OD-110W is a powerful, stable, and efficient IR emitter designed for precision and performance in high-demand optical systems.