Super High-Power IR Emitters With Very Uniform Optical Beam: OD-110W
Source: Opto Diode, An ITW Company
Opto Diode's new series of super high power gallium aluminum arsenide (GaAlAs) infrared (IR) emitters includes the OD-110W which features a very uniform optical beam. This Super High-Power IR Emitters is designed especially for military imaging applications and systems using night vision (NV) imaging technology, such as NV goggles and/or cameras, or for integration into markers and illuminators.
Super High-Power IR Emitters: OD-110W Features:
- Ultra-High Optical Output
- Four Wire Bonds on Die Corners
- Very Uniform Optical Beam
- Standard 3-Lead TO-39 Hermetic Package
- Chip Size: 0.026" x 0.026"
For more information, download the available datasheet.
Opto Diode, An ITW Company
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