Opto Diode Products

  1. RadHard (Radiation Hardened) Photodiode for Electron Detection: UVG20C 10/9/2013

    This photodiode has several distinctive features, though its most notable feature is its radiation-hardened, junction-passivating, oxynitride protective entrance window. This gives the UVG20C a distinct advantage over traditional silicon photodiodes where space and satellite applications are concerned.

  2. Photodiode for Vacuum/Extreme UV Photon Detection 9/16/2013

    This photodiode features a 100mm2 active area and outstanding UV response. It’s particularly suited for applications requiring extreme stability for detecting vacuum ultraviolet and extreme ultraviolet photons.

  3. High Power, GaAIAs IRLED Illuminator 8/22/2013

    Opto Diode’s OD-669-850 high-power IRLED illuminator provides a very uniform optical beam with an ultra-high optical output from 800 (min) to 1250 mW (typ) and a peak emission wavelength of 850 nm.

  4. 16-Element Photodiode for Electron Detection 5/17/2013

    Opto Diode's new 16-element detector (model AXUV16ELG) is ideal for UV/EUV electron detection. Offered in a 40-pin dual in-line package, it has a 2mm x 5mm active area with a sensitive area of 10mm2  per element.  The detector features 100% internal quantum efficiency, and stable response after exposure to high energy electrons or photons.

  5. New Ultra-High Optical Output IR Emitters 850nm: OD-250 4/20/2012

    Opto Diode announces the third edition to their new series of three super-high-power infrared (IR) emitters. The new gallium aluminum arsenide (GaAlAs) OD-250 features a wide angle, very uniform optical beam with ultra-high optical output.  Total power output is 250mW (typical) with a minimum output at 160 mW.  A peak emission wavelength of 850nm make this IR emitter ideal for military imaging and security applications, night vision (NV) imaging technology, such as night vision cameras and/or goggles, and for integration into illuminators and markers.

  6. Super High-Power GaAlAs IR Emitters: OD-110L 3/28/2012

    Opto Diode's new series of super high power gallium aluminum arsenide (GaAlAs) infrared (IR) emitters includes the OD-110L, which features ultra high optical output with a very narrow optical beam, making it ideal for night vision (NV) and other military imaging applications including integration into illuminators and markers, and systems utilizing NV goggles and cameras. OD-110L is also suitable for harsh environments.

  7. Advanced Photon-Detection Photodiodes 3/21/2012

    Opto Diode provides a full line of semiconductor radiation sensors for detecting photons and other particles. The AXUV-100GX and SXUV-100 absolute devices feature unparalleled quantum efficiency stability and radiation hardness for the measurement of visible, ultraviolet (UV), extreme ultraviolet (EUV), and soft X-ray photons.

  8. High Power, Wide Emission Angle IR Emitters: OD-850W 3/8/2012

    Hermetically sealed, the standard TO-46 package is designed with gold-plated surfaces and welded caps, for added durability. The IR LED offers optical power of 40mW typical at 100mA, continuous forward current at 100mA and peak forward current at 300mA (absolute maximum ratings at 25 degrees C).

  9. High Power, Medium Emission Angle IR Emitters: OD-850L 3/8/2012

    Opto Diode’s new high optical output IR emitters, OD-850L, feature a medium emission angle for optimum coverage with excellent power density. These new Medium Emission Angle, High Power Infrared (IR) LEDs are domestically manufactured using highly reliable, liquid-phase epitaxially-grown gallium aluminum arsenide (GaAlAs) and feature greater output power (nearly 50% more) with less degradation and higher stability than the previous products.

  10. High Power, Narrow Emission Angle IR Emitters: OD-850F 3/8/2012

    Opto Diode’s new High Power, Narrow Angle IR Emitters features a narrow angle emission and a wide range of linear power output (minimum 22, typical 30 mW) with an 850nm peak emission. The high power gallium aluminum arsenide (GaAlAs) IR emitter offers nearly twice as much output power, less degradation, and better stability then previous product versions. Highly durable, the new IR LED device features a hermetically-sealed, standard TO-46 package with gold-plated surfaces and window caps that are welded to the case. The narrow angle is ideal for long-distance LED tasks in a variety of industrial control applications.