The new NIR / Red Enhanced 6mm² ODA-6W-500M Photodetector-Preamplifier from Opto Diode Corporation is a photodiode preamplifier combination device that features higher gain in lower light environments
ODA-6W-100M: NIR / Red-Enhanced Photodiode-Preamplifier
Opto Diode Corporation, a global supplier of advanced photodetectors and high-sensitivity, visible and infrared LEDs, introduces the new NIR / Red Enhanced 6mm² ODA-6W-100M Photodetector-Preamplifier
ODA-5W-100K: NIR / Red Enhanced, 5 mm² Photodiode-Preamplifier
Opto Diode Corporation announces the NIR (near-infrared)/Red Enhanced, 5 mm² Photodiode-Preamplifier. The ODA-5W-100K is ideal for medical diagnostics such as fluorescence and spectroscopy, test and measurement, and other tasks that require low light level detection
6-Inch Silicon Wafer
Opto Diode's bigger, better 6" silicon wafer is now in full production. We engineer, design, and manufacture LEDs and silicon photodiodes in our custom-built, domestic, state-of-the-art wafer lab specifically to provide high-quality, high-volume parts with unsurpassed repeatability.
ODD-3W-2: Bi-Cell Photodiode
Opto Diode Corporation, a U.S. manufacturer of advanced performance photodetectors and visible and infrared LEDs, introduces the new red enhanced ODD-3W-2 Bi-Cell Photodiode
ODA-5W-100M: Photodetector Amplifier Combo
Opto Diode Corporation, a U.S. manufacturer of advanced performance photodetectors and visible and infrared LEDs, announces the new ODA-5W-100M Photodetector Amplifier Combination with 100Mohm gain
ODD-5W: Silicon PIN Photodiode
The PIN photodiodes have excellent responsivity from 400 nm to 1100 nm, exhibit low dark current, low capacitance and feature a 2.52mm active area diameter...
Opto Diode offers U.S. manufactured PIN photodiodes, specifically designed to provide high-quality, high-reliability performance at prices previously only available with lower end off-shore product...
High Output Visible LEDs
High Output Visible LEDs feature wide or narrow light patterns...
IR LED Chips
IR LED Chips feature high-reliability LPE GaA1As structure, gold alloy contacts, open center of emission availability, and up to 200mA continuous current