Opto Diode Products
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Extreme Ultraviolet (EUV) Detection: SXUV20HS1 High Speed Photodiode
9/29/2014
This high-speed photodiode has a Ø 5 mm circular active area and is ideal for laser power monitoring applications due to its repeatable measurements and stable responsivity. It covers the 1 to 200nm (EUV) range and can dissipate a high-powered UV laser’s optical energy without the usual measurement degradation that typically occurs after prolonged UV exposure.
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Single Active Area Photodiode: SXUV100
1/8/2014
Opto Diode’s SXUV100 is a highly sensitive 100mm2 photodiode that provides detection from 1nm to 1000nm, with peak photon responsivity at 0.27A/W (at 1nm) and 0.33A/W (at 850nm).
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Photodiode for 2-Axes Positional Centering: SXUVPS4C
11/19/2013
The SXUVPS4C is a photodiode with a 5 mm2 active area in each of its quadrants. It’s well-suited for 2 axes positional centering applications for lasers in the 13.5 nm to 200 nm wavelength range.
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RadHard (Radiation Hardened) Photodiode for Electron Detection: UVG20C
10/9/2013
This photodiode has several distinctive features, though its most notable feature is its radiation-hardened, junction-passivating, oxynitride protective entrance window. This gives the UVG20C a distinct advantage over traditional silicon photodiodes where space and satellite applications are concerned.
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Photodiode for Vacuum/Extreme UV Photon Detection
9/16/2013
This photodiode features a 100mm2 active area and outstanding UV response. It’s particularly suited for applications requiring extreme stability for detecting vacuum ultraviolet and extreme ultraviolet photons.
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High Power, GaAIAs IRLED Illuminator
8/22/2013
Opto Diode’s OD-669-850 high-power IRLED illuminator provides a very uniform optical beam with an ultra-high optical output from 800 (min) to 1250 mW (typ) and a peak emission wavelength of 850 nm.
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16-Element Photodiode for Electron Detection
5/17/2013
Opto Diode's new 16-element detector (model AXUV16ELG) is ideal for UV/EUV electron detection. Offered in a 40-pin dual in-line package, it has a 2mm x 5mm active area with a sensitive area of 10mm2 per element. The detector features 100% internal quantum efficiency, and stable response after exposure to high energy electrons or photons.
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New Ultra-High Optical Output IR Emitters 850nm: OD-250
4/20/2012
Opto Diode announces the third edition to their new series of three super-high-power infrared (IR) emitters. The new gallium aluminum arsenide (GaAlAs) OD-250 features a wide angle, very uniform optical beam with ultra-high optical output. Total power output is 250mW (typical) with a minimum output at 160 mW. A peak emission wavelength of 850nm make this IR emitter ideal for military imaging and security applications, night vision (NV) imaging technology, such as night vision cameras and/or goggles, and for integration into illuminators and markers.
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Super High-Power IR Emitters With Very Uniform Optical Beam: OD-110W
4/2/2012
Opto Diode's new series of super high power gallium aluminum arsenide (GaAlAs) infrared (IR) emitters includes the OD-110W which features a very uniform optical beam. This Super High-Power IR Emitters is designed especially for military imaging applications and systems using night vision (NV) imaging technology, such as NV goggles and/or cameras, or for integration into markers and illuminators.
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Super High-Power GaAlAs IR Emitters: OD-110L
3/28/2012
Opto Diode's new series of super high power gallium aluminum arsenide (GaAlAs) infrared (IR) emitters includes the OD-110L, which features ultra high optical output with a very narrow optical beam, making it ideal for night vision (NV) and other military imaging applications including integration into illuminators and markers, and systems utilizing NV goggles and cameras. OD-110L is also suitable for harsh environments.