Opto Diode Products

31. Low-Noise Extreme Ultraviolet (EUV) Photodetector 10/12/2016

    The SXUV20C is a new low-noise extreme ultraviolet (EUV) photodetector that is specially designed for high stability over long periods of time when exposed to high intensity EUV energy. The photodetector features superior responsivity in the 1 nm to 200 nm wavelength region, a large 20 mm² circular active area that provides a substantial surface for easy alignment to the EUV laser, and superior hardness in extreme UV environments.

32. Near-Infrared Detectors 2/24/2016

    Opto Diode's new series of near-infrared (NIR) detectors are designed for back-facet laser monitoring applications that require improved performance in the NIR spectrum from 700 nm to 1100 nm. These new photodiodes maximize measurement repeatability and offer a low-cost solution for NIR wavebands.

33. Wide Temperature Range Infrared Emitter: OD-850WHT 9/23/2015

    The new OD-850WHT is a wide temperature range infrared (IR) emitter from Opto Diode designed to simplify thermal design for night vision, aircraft, and vehicle light markers for covert operations in military applications. These emitters also have thermal improvements ideal for high temperature industrial photoelectric controls used in petroleum refining, chemical processing, and power generation and other industrial applications.

34. 13mm² Photodiode: UVG12 8/21/2015

    The new UVG12 from Opto Diode is a 13mm² photodiode specifically designed for detection between 193 nm and 400nm at 100 percent internal quantum efficiency in the UV and visible regions. Ideal applications for these devices include laser power monitoring, photolithography, and other high powered density applications using ultraviolet light.

35. High-Powered GaAlAs Near-Infrared Emitter: OD-110W 7/13/2015

    The OD-110W GaAlAs near-infrared (IR) emitter features uniform optical beams with a typical peak emission wavelength of 850 nm, an optical output of 140mW, a chip size of 0.026 in. x 0.026 in., and gold plating on all surfaces. These near-IR light-emitting diodes (near-IRLEDS) are designed for high-powered night vision and surveillance applications...

36. IR Detectors for Minimizing Out-Of-Band Radiation: SCD-B Series 1/15/2015

    Lead salt detectors were first used for infrared imaging applications in military research during the 1930s. Since their introduction, they’ve proven to be an effective infrared photodetector for a wide range of analysis, spectroscopy, high-speed infrared imaging, and defense applications. They’re not without their shortcomings, however.

37. Repeatability and Reliability in UV Laser Systems: SXUV300C Photodiode 12/17/2014

    Opto Diode’s SXUV300C is a photodiode with a 331 mm² active area and the ability to detect energy from UV wavelengths of 1 nm to 1000 nm. It’s been designed to maximize measurement repeatability and reliability in new or existing high-powered UV laser monitoring systems.

38. Extreme Ultraviolet (EUV) Detection: SXUV20HS1 High Speed Photodiode 9/29/2014

    This high-speed photodiode has a Ø 5 mm circular active area and is ideal for laser power monitoring applications due to its repeatable measurements and stable responsivity. It covers the 1 to 200nm (EUV) range and can dissipate a high-powered UV laser’s optical energy without the usual measurement degradation that typically occurs after prolonged UV exposure.

39. Single Active Area Photodiode: SXUV100 1/8/2014

    Opto Diode’s SXUV100 is a highly sensitive 100mm² photodiode that provides detection from 1nm to 1000nm, with peak photon responsivity at 0.27A/W (at 1nm) and 0.33A/W (at 850nm).

40. Photodiode for 2-Axes Positional Centering: SXUVPS4C 11/19/2013

    The SXUVPS4C is a photodiode with a 5 mm² active area in each of its quadrants. It’s well-suited for 2 axes positional centering applications for lasers in the 13.5 nm to 200 nm wavelength range.