Opto Diode Products
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Wide Temperature Range Infrared Emitter: OD-850WHT
9/23/2015
The new OD-850WHT is a wide temperature range infrared (IR) emitter from Opto Diode designed to simplify thermal design for night vision, aircraft, and vehicle light markers for covert operations in military applications. These emitters also have thermal improvements ideal for high temperature industrial photoelectric controls used in petroleum refining, chemical processing, and power generation and other industrial applications.
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13mm2 Photodiode: UVG12
8/21/2015
The new UVG12 from Opto Diode is a 13mm2 photodiode specifically designed for detection between 193 nm and 400nm at 100 percent internal quantum efficiency in the UV and visible regions. Ideal applications for these devices include laser power monitoring, photolithography, and other high powered density applications using ultraviolet light.
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High-Powered GaAlAs Near-Infrared Emitter: OD-110W
7/13/2015
The OD-110W GaAlAs near-infrared (IR) emitter features uniform optical beams with a typical peak emission wavelength of 850 nm, an optical output of 140mW, a chip size of 0.026 in. x 0.026 in., and gold plating on all surfaces. These near-IR light-emitting diodes (near-IRLEDS) are designed for high-powered night vision and surveillance applications...
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IR Detectors for Minimizing Out-Of-Band Radiation: SCD-B Series
1/15/2015
Lead salt detectors were first used for infrared imaging applications in military research during the 1930s. Since their introduction, they’ve proven to be an effective infrared photodetector for a wide range of analysis, spectroscopy, high-speed infrared imaging, and defense applications. They’re not without their shortcomings, however.
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Repeatability and Reliability in UV Laser Systems: SXUV300C Photodiode
12/17/2014
Opto Diode’s SXUV300C is a photodiode with a 331 mm2 active area and the ability to detect energy from UV wavelengths of 1 nm to 1000 nm. It’s been designed to maximize measurement repeatability and reliability in new or existing high-powered UV laser monitoring systems.
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Extreme Ultraviolet (EUV) Detection: SXUV20HS1 High Speed Photodiode
9/29/2014
This high-speed photodiode has a Ø 5 mm circular active area and is ideal for laser power monitoring applications due to its repeatable measurements and stable responsivity. It covers the 1 to 200nm (EUV) range and can dissipate a high-powered UV laser’s optical energy without the usual measurement degradation that typically occurs after prolonged UV exposure.
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Single Active Area Photodiode: SXUV100
1/8/2014
Opto Diode’s SXUV100 is a highly sensitive 100mm2 photodiode that provides detection from 1nm to 1000nm, with peak photon responsivity at 0.27A/W (at 1nm) and 0.33A/W (at 850nm).
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Photodiode for 2-Axes Positional Centering: SXUVPS4C
11/19/2013
The SXUVPS4C is a photodiode with a 5 mm2 active area in each of its quadrants. It’s well-suited for 2 axes positional centering applications for lasers in the 13.5 nm to 200 nm wavelength range.
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RadHard (Radiation Hardened) Photodiode for Electron Detection: UVG20C
10/9/2013
This photodiode has several distinctive features, though its most notable feature is its radiation-hardened, junction-passivating, oxynitride protective entrance window. This gives the UVG20C a distinct advantage over traditional silicon photodiodes where space and satellite applications are concerned.
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Photodiode for Vacuum/Extreme UV Photon Detection
9/16/2013
This photodiode features a 100mm2 active area and outstanding UV response. It’s particularly suited for applications requiring extreme stability for detecting vacuum ultraviolet and extreme ultraviolet photons.