High Power, Medium Emission Angle IR Emitters: OD-850L
Opto Diode’s new high optical output IR emitters, OD-850L, feature a medium emission angle for optimum coverage with excellent power density. These new Medium Emission Angle, High Power Infrared (IR) LEDs are domestically manufactured using highly reliable, liquid-phase epitaxially-grown gallium aluminum arsenide (GaAlAs) and feature greater output power (nearly 50% more) with less degradation and higher stability than the previous products.
High Power, Narrow Emission Angle IR Emitters: OD-850F
Opto Diode’s new High Power, Narrow Angle IR Emitters features a narrow angle emission and a wide range of linear power output (minimum 22, typical 30 mW) with an 850nm peak emission. The high power gallium aluminum arsenide (GaAlAs) IR emitter offers nearly twice as much output power, less degradation, and better stability then previous product versions. Highly durable, the new IR LED device features a hermetically-sealed, standard TO-46 package with gold-plated surfaces and window caps that are welded to the case. The narrow angle is ideal for long-distance LED tasks in a variety of industrial control applications.
Ultraviolet/Extreme Ultraviolet (UV/EUV) Photodiodes: SXUV 100
Opto Diode’s recent acquisition of has opened a new line of advanced ultraviolet and extreme ultraviolet photodiodes with high stability. The extremely stable SXUV 100 is ideal for the detection of vacuum ultraviolet and extreme ultraviolet photons.
Absolute X-Ray Photodiode: AXUV 100GX
Opto Diode offers a new product line of semiconductor radiation sensors for detecting photons and other particles. The new product line includes the AXUV 100GX Absolute X-ray Photodiode. The X-ray detector possesses known active silicon thicknesses and 100 percent internal quantum efficiency, making possible absolute measurement of X-ray flux with energies 100 keV and beyond.
Responsivity/Energy Comparison Graph AXUV 100GX X-Ray Photodiode
Opto Diode's unique line of AXUV 100GX photodiodes features a large (10 mm x 10 mm square) active area with room-temperature operation and a small detector footprint. Simple to use and, unlike any other X-ray detectors on the market, the X-ray detector requires no external voltage for operation.
High Power, 30-Die, NIR LED Array: OD-850-30-030
Opto Diode’s High Power, 30-Die, NIR LED delivers more efficient operation and higher power with a narrow beam angle of 30 degrees. The device has a peak wavelength of 850 nm (min. 840 nm and max. 865 nm) and a total optical power output of 16 watts. Ideal for night vision systems and skin therapy applications, Opto Diode’s NIR light-emitting-diode array is available for shipping in OEM quantities.
High Output Red LED: OD-624L
Opto Diode Corporation, a global supplier of advanced performance photodiodes and highly reliable, visible and IR LEDs, announces the new OD-624L High Output Red LED. The second product to be introduced in Opto Diode’s high output light-emitting diode series has a dominant emission wavelength at 624 nm (typical) and features a narrow beam angle that is ideal for fluorescence in medical, scientific testing instruments, and forensic applications.
High Output Blue LEDs
Opto Diode Corporation, a global supplier of advanced performance photodiodes and highly reliable, visible and IR LEDs, introduces new OD-469L High Output Blue LEDs. Featuring a narrow beam angle, the new LEDs are ideal for fluorescence in medical, scientific testing instruments, and forensic applications.
Selective Wavelength Photodiodes
Opto Diode Corporation, a U.S. manufacturer of advanced performance photodetectors and visible and infrared LEDs, presents their line of Selective Wavelength Photodiodes. Each photodetector features a variety of active areas and peak wavelength responses, to fit your application.
Selective Wavelength Photodiodes With 660nm Peak Wavelength Response
Opto Diode Corporation announces the third in the series of new selective wavelength photodiodes, the ODD-660W. The new device operates from 550nm to 720nm with peak response at 660nm and features a spectral bandwidth of 80nm. The hermetically-sealed photodiode offers extremely low dark current without the need for optical filters.