16-Element Photodiode for Electron Detection
Opto Diode's new 16-element detector (model AXUV16ELG) is ideal for UV/EUV electron detection. Offered in a 40-pin dual in-line package, it has a 2mm x 5mm active area with a sensitive area of 10mm2 per element. The detector features 100% internal quantum efficiency, and stable response after exposure to high energy electrons or photons.
Surface Mount Photodiode: ODD-900-002
With high sensitivity and short switching time, this low capacitance photodiode is ideal for use in a variety of medical diagnostic applications. The surface mount packaging allows for easy and convenient integration into new or existing systems. The device operates in the spectral bandwidth from 400 (min.) to 1100 (max.) nm, with a peak sensitivity of 940 nm. Typical responsivity is at 0.44 A/W with typical reverse dark current at 5 nA and total capacitance, typically at 25 pF.
Surface Mount Photodiode with Daylight Filter: ODD-900-001
This surface-mount photodiode features a daylight filter, low capacitance, a short switching time, and a surface mount package, making it ideal for applications involving industrial photoelectric control. It also features high sensitivity ranging from 730 nm to 1100 nm spectral range, with peak sensitivity at 940 nm.
New Ultra-High Optical Output IR Emitters 850nm: OD-250
Opto Diode announces the third edition to their new series of three super-high-power infrared (IR) emitters. The new gallium aluminum arsenide (GaAlAs) OD-250 features a wide angle, very uniform optical beam with ultra-high optical output. Total power output is 250mW (typical) with a minimum output at 160 mW. A peak emission wavelength of 850nm make this IR emitter ideal for military imaging and security applications, night vision (NV) imaging technology, such as night vision cameras and/or goggles, and for integration into illuminators and markers.
Super High-Power IR Emitters With Very Uniform Optical Beam: OD-110W
Opto Diode's new series of super high power gallium aluminum arsenide (GaAlAs) infrared (IR) emitters includes the OD-110W which features a very uniform optical beam. This Super High-Power IR Emitters is designed especially for military imaging applications and systems using night vision (NV) imaging technology, such as NV goggles and/or cameras, or for integration into markers and illuminators.
Super High-Power GaAlAs IR Emitters: OD-110L
Opto Diode's new series of super high power gallium aluminum arsenide (GaAlAs) infrared (IR) emitters includes the OD-110L, which features ultra high optical output with a very narrow optical beam, making it ideal for night vision (NV) and other military imaging applications including integration into illuminators and markers, and systems utilizing NV goggles and cameras. OD-110L is also suitable for harsh environments.
Advanced Photon-Detection Photodiodes
Opto Diode provides a full line of semiconductor radiation sensors for detecting photons and other particles. The AXUV-100GX and SXUV-100 absolute devices feature unparalleled quantum efficiency stability and radiation hardness for the measurement of visible, ultraviolet (UV), extreme ultraviolet (EUV), and soft X-ray photons.
High Power, Wide Emission Angle IR Emitters: OD-850W
Hermetically sealed, the standard TO-46 package is designed with gold-plated surfaces and welded caps, for added durability. The IR LED offers optical power of 40mW typical at 100mA, continuous forward current at 100mA and peak forward current at 300mA (absolute maximum ratings at 25 degrees C).
High Power, Medium Emission Angle IR Emitters: OD-850L
Opto Diode’s new high optical output IR emitters, OD-850L, feature a medium emission angle for optimum coverage with excellent power density. These new Medium Emission Angle, High Power Infrared (IR) LEDs are domestically manufactured using highly reliable, liquid-phase epitaxially-grown gallium aluminum arsenide (GaAlAs) and feature greater output power (nearly 50% more) with less degradation and higher stability than the previous products.
High Power, Narrow Emission Angle IR Emitters: OD-850F
Opto Diode’s new High Power, Narrow Angle IR Emitters features a narrow angle emission and a wide range of linear power output (minimum 22, typical 30 mW) with an 850nm peak emission. The high power gallium aluminum arsenide (GaAlAs) IR emitter offers nearly twice as much output power, less degradation, and better stability then previous product versions. Highly durable, the new IR LED device features a hermetically-sealed, standard TO-46 package with gold-plated surfaces and window caps that are welded to the case. The narrow angle is ideal for long-distance LED tasks in a variety of industrial control applications.