Surface Mount Photodiode with Daylight Filter: ODD-900-001
This surface-mount photodiode features a daylight filter, low capacitance, a short switching time, and a surface mount package, making it ideal for applications involving industrial photoelectric control. It also features high sensitivity ranging from 730 nm to 1100 nm spectral range, with peak sensitivity at 940 nm.
New Ultra-High Optical Output IR Emitters 850nm: OD-250
Opto Diode announces the third edition to their new series of three super-high-power infrared (IR) emitters. The new gallium aluminum arsenide (GaAlAs) OD-250 features a wide angle, very uniform optical beam with ultra-high optical output. Total power output is 250mW (typical) with a minimum output at 160 mW. A peak emission wavelength of 850nm make this IR emitter ideal for military imaging and security applications, night vision (NV) imaging technology, such as night vision cameras and/or goggles, and for integration into illuminators and markers.
Super High-Power IR Emitters With Very Uniform Optical Beam: OD-110W
Opto Diode's new series of super high power gallium aluminum arsenide (GaAlAs) infrared (IR) emitters includes the OD-110W which features a very uniform optical beam. This Super High-Power IR Emitters is designed especially for military imaging applications and systems using night vision (NV) imaging technology, such as NV goggles and/or cameras, or for integration into markers and illuminators.
Super High-Power GaAlAs IR Emitters: OD-110L
Opto Diode's new series of super high power gallium aluminum arsenide (GaAlAs) infrared (IR) emitters includes the OD-110L, which features ultra high optical output with a very narrow optical beam, making it ideal for night vision (NV) and other military imaging applications including integration into illuminators and markers, and systems utilizing NV goggles and cameras. OD-110L is also suitable for harsh environments.
Advanced Photon-Detection Photodiodes
Opto Diode provides a full line of semiconductor radiation sensors for detecting photons and other particles. The IRD AXUV-100GX and IRD SXUV-100 absolute devices feature unparalleled quantum efficiency stability and radiation hardness for the measurement of visible, ultraviolet (UV), extreme ultraviolet (EUV), and soft X-ray photons.
High Power, Wide Emission Angle IR Emitters: OD-850W
Hermetically sealed, the standard TO-46 package is designed with gold-plated surfaces and welded caps, for added durability. The IR LED offers optical power of 40mW typical at 100mA, continuous forward current at 100mA and peak forward current at 300mA (absolute maximum ratings at 25 degrees C).
High Power, Medium Emission Angle IR Emitters: OD-850L
Opto Diode’s new high optical output IR emitters, OD-850L, feature a medium emission angle for optimum coverage with excellent power density. These new Medium Emission Angle, High Power Infrared (IR) LEDs are domestically manufactured using highly reliable, liquid-phase epitaxially-grown gallium aluminum arsenide (GaAlAs) and feature greater output power (nearly 50% more) with less degradation and higher stability than the previous products.
High Power, Narrow Emission Angle IR Emitters: OD-850F
Opto Diode’s new High Power, Narrow Angle IR Emitters features a narrow angle emission and a wide range of linear power output (minimum 22, typical 30 mW) with an 850nm peak emission. The high power gallium aluminum arsenide (GaAlAs) IR emitter offers nearly twice as much output power, less degradation, and better stability then previous product versions. Highly durable, the new IR LED device features a hermetically-sealed, standard TO-46 package with gold-plated surfaces and window caps that are welded to the case. The narrow angle is ideal for long-distance LED tasks in a variety of industrial control applications.
Ultraviolet/Extreme Ultraviolet (UV/EUV) Photodiodes: IRD SXUV 100
Opto Diode’s recent acquisition of International Radiation Detectors (IRD) has opened a new line of advanced ultraviolet and extreme ultraviolet photodiodes with high stability. The extremely stable IRD SXUV 100 is ideal for the detection of vacuum ultraviolet and extreme ultraviolet photons.
Absolute X-Ray Photodiode: IRD AXUV 100GX
Opto Diode offers a new product line of semiconductor radiation sensors for detecting photons and other particles. The new product line includes the IRD AXUV 100GX Absolute X-ray Photodiode. The X-ray detector possesses known active silicon thicknesses and 100 percent internal quantum efficiency, making possible absolute measurement of X-ray flux with energies 100 keV and beyond.