High Power, Narrow Emission Angle IR Emitters: OD-850F
Opto Diode’s new High Power, Narrow Angle IR Emitters features a narrow angle emission and a wide range of linear power output (minimum 22, typical 30 mW) with an 850nm peak emission. The high power gallium aluminum arsenide (GaAlAs) IR emitter offers nearly twice as much output power, less degradation, and better stability then previous product versions. Highly durable, the new IR LED device features a hermetically-sealed, standard TO-46 package with gold-plated surfaces and window caps that are welded to the case. The narrow angle is ideal for long-distance LED tasks in a variety of industrial control applications.
Click Here To Download:
•High Power, Narrow Emission Angle IR Emitters: OD-850F Datasheet
With optical power output of 30mW typical at 100mA and continuous forward current at 100mA, the peak forward current (based on absolute maximum ratings at 25 degrees C) is 300mA. Opto Diode’s new OD-850F narrow angle, high power emitter can be stored and operated safely at temperatures ranging from -40 C to 100 degrees C. The OD850F High Power, Narrow Emission Angle IR Emitters are shipping now.
FEATURES
- High Power
- 850nm peak emission
- Hermetically sealed TO-46 package
- Narrow angle for long distance applications
Click Here To Download:
•High Power, Narrow Emission Angle IR Emitters: OD-850F Datasheet