Shown: SXUV100TF135 & SXUV100TF135BOpto Diode introduces two new 13.5 nm directly-deposited thin-film filter photodetectors ideal for electrical performance in many applications, including laser power monitoring, semiconductor photolithography, and metrology systems that utilize extreme ultraviolet light. The SXUV100TF135 and SXUV100TF135B feature a 100 mm2 active area, detection capabilities between 12 nm and 18 nm, and a responsivity of 0.09 A/W at 13.5 nm.
Shown: AXUV100TF400 & AXUV100TF030The AXUV100TF030 and AXUV100TF400 directly-deposited thin-film filter photodiode family features 100 mm2 square active area for extreme ultraviolet (EUV) detection. The devices are designed for use in detecting solar EUV radiation, soft x-ray radiometry, x-ray and EUV lithography, x-ray microscopy and extreme vacuum ultraviolet (XUV) spectroscopy. The AXUV100TF030 features typical responsivity of 0.16 A/W at 3 nm and has a detection range from 1 nm to 12 nm. The AXU100TF400 features typical responsivity of 0.15 A/W at 40 nm with a detection range from 18 nm to 80 nm.
For additional information on the thin-film filter photodetectors, download the available datasheets.
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