Opto Diode's new series of near-infrared (NIR) detectors are designed for back-facet laser monitoring applications that require improved performance in the NIR spectrum from 700 nm to 1100 nm. These new photodiodes maximize measurement repeatability and offer a low-cost solution for NIR wavebands.
The NXIR-RF36 and NXIR-RF74 are ideal for integration with semiconductor lasers such as the Fabry-Perot (FP), distributed feedback (DFB) lasers, and vertical-cavity surface-emitting lasers (VCSELs). These instruments feature high responsivity of 0.65 A/W @ 850 nm, low capacitance of 5 picofarads (pF) at 0 volts, and high shunt resistance that is greater than 200 MΩ. The NXIR-RF36 has an active area of 0.36 mm2, while the NXIR-RF70 has an active area of 0.70 mm2. Both detectors are available in either waffle pack or dicing tape for high-volume shipments.
The third detector, NXIR-5W, is ideally suited for high-power-laser monitoring that requires higher responsivity in the NIR spectrum. Features include high responsivity at 1064 nm with low reverse bias voltage of 10V, low dark current of 1nA, low capacitance of 10 pF, and a hermetically-sealed, standard two-lead TO-5 package. The NXIR-5W can be used in biological, dental, and medical equipment, as well as in fluid dynamics, manufacturing, and military applications.
For more features, specifications, and operating parameters for the available models, download the datasheets.