High Power, GaAIAs IRLED Illuminator: OD-669-850 Datasheet
The OD-669-850 is a GaAIAs (gallium aluminum arsenide) IRLED illuminator ideal for night vision illumination.
16-Element Photodiode for Electron Detection: AXUV16ELG Datasheet
This datasheet includes features, electro-optical characteristics, and thermal properties for the AXUV16ELG 16-element photodiode by Opto Diode.
Surface Mount Photodiode: ODD-900-002 Datasheet
With high sensitivity and short switching time, this low capacitance photodiode is ideal for use in a variety of medical diagnostic applications. The surface mount packaging allows for easy and convenient integration into new or existing systems. The device operates in the spectral bandwidth from 400 (min.) to 1100 (max.) nm, with a peak sensitivity of 940 nm.
Surface Mount Photodiode with Daylight Filter: ODD-900-001 Datasheet
Opto Diode’s ODD-900-001 Surface Mount Photodiode with Daylight Filter is ideal for industrial photoelectric control, and other industrial detection applications. It features high sensitivity, low capacitance, short switching time, and more.
Ultra-High Optical Output IR Emitters 850nm: OD-250 Datasheet
Opto Diode’s New Ultra-High Optical Output IR Emitters (OD-250) provide a total power output of 250mW (typical) with a minimum output at 160 mW. High durability and a peak emission wavelength of 850nm make this emitter making this IR emitter ideal for military imaging and security applications, night vision (NV) imaging technology, such as night vision cameras and/or goggles, and for integration into illuminators and markers.
Super High-Power IR Emitters With Very Uniform Optical Beam: OD-110W Datasheet
Opto Diode's new series of super high power gallium aluminum arsenide (GaAlAs) infrared (IR) emitters includes the OD-110W which features a very uniform optical beam. This Super High-Power IR Emitters is designed especially for military imaging applications and systems using night vision (NV) imaging technology, such as NV goggles and/or cameras, or for integration into markers and illuminators.
Super High-Power GaAlAs IR Emitters: OD-110L Datasheet
Opto Diode’s Super High-Power GaAlAs IR Emitters: OD-110L features total power output (typical, at 25 degrees C) of 110mW and the minimum output is 55mW with peak emission wavelength at 850 nm.
High Power, Wide Emission Angle IR Emitters: OD-850W Datasheet
Hermetically sealed, the standard TO-46 package of Opto Diode’s OD-850W is designed with gold-plated surfaces and welded caps, for added durability. The IR LED offers optical power of 40mW typical at 100mA, continuous forward current at 100mA and peak forward current at 300mA (absolute maximum ratings at 25 degrees C).
High Power, Medium Emission Angle IR Emitters: OD-850L Datasheet
Opto Diode’s new high optical output IR emitters, OD-850L, feature a medium emission angle for optimum coverage with excellent power density. These new Medium Emission Angle, High Power Infrared (IR) LEDs are domestically manufactured using highly reliable, liquid-phase epitaxially-grown gallium aluminum arsenide (GaAlAs) and feature greater output power (nearly 50% more) with less degradation and higher stability than the previous products.
High Power, Narrow Emission Angle IR Emitters: OD-850F Datasheet
With optical power output of 30mW typical at 100mA and continuous forward current at 100mA, Opto Diode’s new High Power, Narrow Emission Angle IR Emitters: OD-850F feature peak forward current (based on absolute maximum ratings at 25 degrees C) is 300mAThe OD-850F can be stored and operated safely at temperatures ranging from -40 C to 100 degrees C.