Opto Diode Downloads

  1. High-Temperature, Wide-Angle Infrared Light-Emitting Diode (IRLED): OD-110WISOLHT Datasheet 6/30/2022

    The OD-110WISOLHT is a high-temperature, wide-angle infrared light-emitting diode (IRLED) specially designed for high-temperature applications, such as covert exterior aircraft lighting. The device features a peak emission wavelength of 880 nm and total power output ranging from 60 mW (minimum) up to 120 mW (typical). 

  2. High-Power GaAlAs IRLED Illuminator: OD-663-850 Datasheet 6/30/2022

    The OD-663-850 is a gallium aluminum arsenide (GaAlAs) near-infrared (IR) LED illuminator with ultra-high-power output, the OD-663-850. Specially designed for use in surveillance and night vision applications, the device has a very uniform optical beam with a peak emission wavelength of 850 nm.

  3. High-Power GaAlAs IRLED Illuminator: OD-669 Datasheet 5/9/2022

    The high-power gallium aluminum arsenide (GaAlAs) IRLED illuminator features a peak emission of 880 nm with an extremely wide angle of emission. Designed with nine chips connected in series, the robust device is housed in an electrically-isolated case, making it ideal for covert aircraft lighting or covert anti-collision lighting in aviation applications.

  4. UV-Enhanced Detector With 5.5 mm Diameter Active Area: UVG20S Datasheet 11/18/2020

    Opto Diode offers a new ultraviolet-enhanced detector featuring UV detection between 190 nm and 400 nm spectral wavelength, with a full spectrum of 190 nm out of 1000 nm. The device features stable responsivity over wide temperature ranges and 100% internal quantum efficiency from 200 to 400 nm. It has a circular active area specially designed for high energy detection, such as for laser power monitoring applications.

  5. High-Temperature Infrared Emitter With Narrow Angle Of Emission: OD-110LISOLHT Datasheet 7/16/2020

    The OD-110LISOLHT is a high-power, GaAlAs infrared light-emitting diode (IRLED) illuminator. This device features a narrow angle of emission and a wide temperature rating for use in several industrial and defense/military applications, such as exterior covert lighting on an aircraft.

  6. Rectangular Photodiode For Electron Detection: AXUV300C Datasheet 3/31/2020

    The AXUV300C photodiode from Opto Diode offers a large, 331 mm2 rectangular active area with no window to allow for detection of energy shorter than 200 nm. Other features include a response time of 15 microseconds and electron detection as low as 200 eV.

  7. High-Speed, 9 mm² Circular Photodiode For Electron Detection: AXUV63HS1 Datasheet 12/13/2018

    The AXUV63HS1 high-speed photodetector is designed with a circular active area of 9 mm diameter and is ideally suited for electron detection. This detector features a typical rise time of 10 nsec, a minimum dark current of 100 nA, and a minimum reverse breakdown voltage of 160 V. Storage and operating temperatures range from -10 °C to +40 °C (ambient) and from -20 °C to +80 °C in nitrogen or vacuum environments.

  8. 5 mm2 Circular Photodiodes For Radiation Detection: AXUV20A Series Datasheet 9/14/2018

    The AXUV20A Circular Photodetectors are designed specifically for radiation, electron, and photon response in the ultraviolet (UV), extreme ultraviolet (EUV), through visible and near-infrared (IR) wavelength ranges. Each circular diode has an active area of a 5.5 mm diameter with excellent sensitivity to low energy electrons.

  9. Directly-Deposited Thin-Film Filter Photodetectors: AXUV100TF400 Datasheet 4/25/2018

    The AXUV100TF400 is a directly-deposited thin-film filter photodetector featuring 100 mm2 square active area for extreme ultraviolet (EUV) detection. The device is designed for use in detecting solar EUV radiation, soft x-ray radiometry, x-ray and EUV lithography, x-ray microscopy and extreme vacuum ultraviolet (XUV) spectroscopy. The AXU100TF400 features typical responsivity of 0.15 A/W at 40 nm with a detection range from 18 nm to 80 nm.

  10. Directly-Deposited Thin-Film Filter Photodetectors: AXUV100TF030 Datasheet 4/25/2018

    The AXUV100TF030 is a directly-deposited thin-film filter photodetector featuring 100 mm2 square active area for extreme ultraviolet (EUV) detection. The device is designed for use in detecting solar EUV radiation, soft x-ray radiometry, x-ray and EUV lithography, x-ray microscopy and extreme vacuum ultraviolet (XUV) spectroscopy.  The AXUV100TF030 features typical responsivity of 0.16 A/W at 3 nm and has a detection range from 1 nm to 12 nm.