Datasheet: Selective Wavelength Photodiodes With 660nm Peak Wavelength Response
Opto Diode Corporation announces the third in the series of new selective wavelength photodiodes, the ODD-660W. The new device operates from 550nm to 720nm with peak response at 660nm and features a spectral bandwidth of 80nm. The hermetically-sealed photodiode offers extremely low dark current without the need for optical filters.
Datasheet: Selective Wavelength Photodetectors
The ODD-525W, designed specifically for the automotive and colorimetry industries, has an active area of .62 mm² and operates between 450 nm and 570 nm, with a peak sensitivity response at 525 nm.
Datasheet: Selective Wavelength Photodiodes
Opto Diode Corporation, a global supplier of advanced performance photodiodes and highly reliable, visible and IR LEDs, introduces the first in a series of three new selective wavelength photodiodes.
Spec Sheet: 5 mm² Photodiode-Preamplifier (ODA-5WB-100K)
The 5 mm² Photodiode-Preamplifier ODA-5WB-100K from Opto Diode Corporation is the first in a series of three blue/green-enhanced devices. The new silicon detector-preamp features 100 Kohm gain, and offers wavelength response at 450 nm, typically 28 V/mW (min. 20).
Datasheet: High-Power GaAlAs Emitter Chips: Model OD-24x24-C
Features of high-power GaAlAs Emitter Chips include: high current capability, 2 bond pads for uniform output, gold contacts for high reliability bonding, high reliability LPE GaAlAs IRLED chips
Datasheet: High-Power GaAlAs IR Emitter Chips: Model OD-148-C
Features of High-Power GaAlAs IR Emitter Chips include: high reliability LPE GaAlAs IRLED chips, open center emission for imaging applications, high output uniformity from emitting surfaces, and gold contacts for high reliability bonding
Datasheet: High-Power GaAlAs IR Emitter Chips: Model OD-880-C
Features of High-Power GaAlAs IR Emitter Chips include: high reliability LPE GaAlAs IRLED chips, graded-bandgap LED structure for high radiant power output, 880nm peak emission, good ohmic contacts (gold alloys), and good bondability
Datasheet: ODA-6W-500M Photodetector-Preamplifier
The NIR / Red Enhanced 6mm² ODA-6W-500M Photodetector-Preamplifier from Opto Diode Corporation is a photodiode preamplifier combination device that features higher gain in lower light environments
Datasheet: ODA-6W-100M NIR / Red-Enhanced Photodiode-Preamplifier
Opto Diode Corporation introduces the new NIR / Red Enhanced 6mm² ODA-6W-100M Photodetector-Preamplifier. The near-infrared photodetector-preamp combo features lower noise than discrete detector preamp circuits due to Opto Diode’s proprietary, shielded amplifier electronics
Application Note: Specifying LEDs: Important Performance Parameters To Consider
This article provides an overview of the important LED performance parameters, enabling users to select the product that best meets the needs of their particular application