Opto Diode Downloads

  1. Datasheet: Selective Wavelength Photodiodes With 660nm Peak Wavelength Response
    7/7/2009
    Opto Diode Corporation announces the third in the series of new selective wavelength photodiodes, the ODD-660W. The new device operates from 550nm to 720nm with peak response at 660nm and features a spectral bandwidth of 80nm. The hermetically-sealed photodiode offers extremely low dark current without the need for optical filters.
  2. Datasheet: Selective Wavelength Photodetectors
    5/28/2009
    The ODD-525W, designed specifically for the automotive and colorimetry industries, has an active area of .62 mm² and operates between 450 nm and 570 nm, with a peak sensitivity response at 525 nm.
  3. Datasheet: Selective Wavelength Photodiodes
    4/29/2009
    Opto Diode Corporation, a global supplier of advanced performance photodiodes and highly reliable, visible and IR LEDs, introduces the first in a series of three new selective wavelength photodiodes.
  4. Spec Sheet: 5 mm² Photodiode-Preamplifier (ODA-5WB-100K)
    7/23/2008
    The 5 mm² Photodiode-Preamplifier ODA-5WB-100K from Opto Diode Corporation is the first in a series of three blue/green-enhanced devices. The new silicon detector-preamp features 100 Kohm gain, and offers wavelength response at 450 nm, typically 28 V/mW (min. 20).
  5. Datasheet: High-Power GaAlAs Emitter Chips: Model OD-24x24-C
    6/6/2008
    Features of high-power GaAlAs Emitter Chips include: high current capability, 2 bond pads for uniform output, gold contacts for high reliability bonding, high reliability LPE GaAlAs IRLED chips
  6. Datasheet: High-Power GaAlAs IR Emitter Chips: Model OD-148-C
    6/6/2008
    Features of High-Power GaAlAs IR Emitter Chips include: high reliability LPE GaAlAs IRLED chips, open center emission for imaging applications, high output uniformity from emitting surfaces, and gold contacts for high reliability bonding
  7. Datasheet: High-Power GaAlAs IR Emitter Chips: Model OD-880-C
    6/6/2008
    Features of High-Power GaAlAs IR Emitter Chips include: high reliability LPE GaAlAs IRLED chips, graded-bandgap LED structure for high radiant power output, 880nm peak emission, good ohmic contacts (gold alloys), and good bondability
  8. Datasheet: ODA-6W-500M Photodetector-Preamplifier
    3/31/2008
    The NIR / Red Enhanced 6mm² ODA-6W-500M Photodetector-Preamplifier from Opto Diode Corporation is a photodiode preamplifier combination device that features higher gain in lower light environments
  9. Datasheet: ODA-6W-100M NIR / Red-Enhanced Photodiode-Preamplifier
    3/3/2008
    Opto Diode Corporation introduces the new NIR / Red Enhanced 6mm² ODA-6W-100M Photodetector-Preamplifier. The near-infrared photodetector-preamp combo features lower noise than discrete detector preamp circuits due to Opto Diode’s proprietary, shielded amplifier electronics
  10. Application Note: Specifying LEDs: Important Performance Parameters To Consider
    1/31/2008
    This article provides an overview of the important LED performance parameters, enabling users to select the product that best meets the needs of their particular application