Opto Diode Downloads

  1. SXUV300C Photodiode Datasheet 12/17/2014

    The SXUV300C is a silicon photodiode designed to maximize measurement repeatability and reliability in new or existing high-powered UV laser monitoring systems.

  2. Extreme Ultraviolet (EUV) Detection: SXUV20HS1 High Speed Photodiode Datasheet 9/29/2014

    The SXUV20HS1 is a high-speed photodiode ideal for applications that call for tight laser output control, fast responsivity, and measurement stability. It covers the 1 to 200nm (EUV) range and has a Ø 5 mm circular active area.

  3. Single Active Area Photodiode: SXUV100 Datasheet 1/8/2014

    The SXUV100 is a photodiode with a 100mm2 active area. It offers remarkable stability after exposure to EUV/UV conditions and provides detection from 1nm to 1000nm.

  4. Quadrant Photodiode: SXUVPS4C Datasheet 11/19/2013

    This datasheet includes electro-optical characteristics as well as thermal parameters for Opto Diode’s SXUVPS4C quadrant photodiode.

  5. RadHard (Radiation Hardened) Photodiode for Electron Detection: UVG20C Datasheet 10/9/2013

    The UVG200C is a RadHard (radiation hardened) photodiode ideal for detecting electrons in space and satellite applications.

  6. UVG100 Photodiode Datasheet 9/16/2013

    Opto Diode’s UVG100 is a photodiode ideal for applications that require extreme stability for detecting vacuum ultraviolet and extreme ultraviolet photons.

  7. High Power, GaAIAs IRLED Illuminator: OD-669-850 Datasheet 8/22/2013

    The OD-669-850  is a GaAIAs (gallium aluminum arsenide) IRLED illuminator ideal for night vision illumination.

  8. 16-Element Photodiode for Electron Detection: AXUV16ELG Datasheet 5/17/2013

    This datasheet includes features, electro-optical characteristics, and thermal properties for the AXUV16ELG 16-element photodiode by Opto Diode.

  9. Ultra-High Optical Output IR Emitters 850nm: OD-250 Datasheet 4/20/2012

    Opto Diode’s New Ultra-High Optical Output IR Emitters (OD-250) provide a total power output of 250mW (typical) with a minimum output at 160 mW. High durability and a peak emission wavelength of 850nm make this emitter making this IR emitter ideal for military imaging and security applications, night vision (NV) imaging technology, such as night vision cameras and/or goggles, and for integration into illuminators and markers.

  10. Super High-Power GaAlAs IR Emitters: OD-110L Datasheet 3/28/2012

    Opto Diode’s Super High-Power GaAlAs IR Emitters: OD-110L features total power output (typical, at 25 degrees C) of 110mW and the minimum output is 55mW with peak emission wavelength at 850 nm.