Opto Diode Downloads

  1. Practical Considerations For Near-IR LEDs 9/15/2016

    This application note offers tips on powering current-driven LED devices and key details about IR LEDs, including temperature, peak wavelengths, forward voltage levels, and power outputs.

  2. Near-Infrared Detectors: NXIR-5W Datasheet 4/8/2016

    The NXIR-5W is ideally suited for high-power laser monitoring that requires higher responsivity in the NIR spectrum. Features include high responsivity at 1064 nm with low reverse bias of 10V, low dark current of 1nA, low capacitance of 10 pF, and a hermetically-sealed standard two-lead TO-5 package. The NXIR-5W can be used in biological, dental, and medical equipment, as well as in fluid dynamics, manufacturing, and military applications.

  3. Near-Infrared Detectors: NXIR-RF36 Datasheet 2/24/2016

    The NXIR-RF36 is designed for integration with semiconductor lasers such as the Fabry-Perot (FP), distributed feedback (DFB) lasers, and vertical-cavity surface-emitting lasers (VCSELs). These instruments feature high responsivity of 0.65 A/W @ 850 nm, low capacitance of 5 picofarads (pF) at 0 volts, high shunt resistance greater than 200 MΩ, and an active area of 0.36 mm2.

  4. Wide Temperature Range Infrared Emitter: OD-850WHT Datasheet 9/23/2015

    The new OD-850WHT wide temperature range infrared (IR) emitter features typical optical output ranges from 24 to 28 mW, a wide emission angle, and temperature operating range from -65 to +150°C. These emitters also have thermal improvements ideal for high temperature industrial photoelectric controls used in petroleum refining, chemical processing, and power generation and other industrial applications.

  5. 13mm2 Photodiode: UVG12 Datasheet 8/21/2015

    The new UVG12 is a 13mm2 photodiode specifically designed for detection between 193 nm and 400 nm at 100 percent internal quantum efficiency in the UV and visible regions. It exhibits extreme stability, features operation and storage temperatures from -20°C - 80°C, and displays less than a 2% drop in responsivity after exposure to megajoules/cm2 of 254 nm light.

  6. SXUV300C Photodiode Datasheet 12/17/2014

    The SXUV300C is a silicon photodiode designed to maximize measurement repeatability and reliability in new or existing high-powered UV laser monitoring systems.

  7. Extreme Ultraviolet (EUV) Detection: SXUV20HS1 High Speed Photodiode Datasheet 9/29/2014

    The SXUV20HS1 is a high-speed photodiode ideal for applications that call for tight laser output control, fast responsivity, and measurement stability. It covers the 1 to 200nm (EUV) range and has a Ø 5 mm circular active area.

  8. Single Active Area Photodiode: SXUV100 Datasheet 1/8/2014

    The SXUV100 is a photodiode with a 100mm2 active area. It offers remarkable stability after exposure to EUV/UV conditions and provides detection from 1nm to 1000nm.

  9. Quadrant Photodiode: SXUVPS4C Datasheet 11/19/2013

    This datasheet includes electro-optical characteristics as well as thermal parameters for Opto Diode’s SXUVPS4C quadrant photodiode.

  10. RadHard (Radiation Hardened) Photodiode for Electron Detection: UVG20C Datasheet 10/9/2013

    The UVG200C is a RadHard (radiation hardened) photodiode ideal for detecting electrons in space and satellite applications.