Opto Diode Downloads

  1. UV-Enhanced Detector With 5.5 mm Diameter Active Area: UVG20S Datasheet 11/18/2020

    Opto Diode offers a new ultraviolet-enhanced detector featuring UV detection between 190 nm and 400 nm spectral wavelength, with a full spectrum of 190 nm out of 1000 nm. The device features stable responsivity over wide temperature ranges and 100% internal quantum efficiency from 200 to 400 nm. It has a circular active area specially designed for high energy detection, such as for laser power monitoring applications.

  2. High-Temperature Infrared Emitter With Narrow Angle Of Emission: OD-110LISOLHT Datasheet 7/16/2020

    The OD-110LISOLHT is a high-power, GaAlAs infrared light-emitting diode (IRLED) illuminator. This device features a narrow angle of emission and a wide temperature rating for use in several industrial and defense/military applications, such as exterior covert lighting on an aircraft.

  3. Rectangular Photodiode For Electron Detection: AXUV300C Datasheet 3/31/2020

    The AXUV300C photodiode from Opto Diode offers a large, 331 mm2 rectangular active area with no window to allow for detection of energy shorter than 200 nm. Other features include a response time of 15 microseconds and electron detection as low as 200 eV.

  4. High-Speed, 9 mm² Circular Photodiode For Electron Detection: AXUV63HS1 Datasheet 12/13/2018

    The AXUV63HS1 high-speed photodetector is designed with a circular active area of 9 mm diameter and is ideally suited for electron detection. This detector features a typical rise time of 10 nsec, a minimum dark current of 100 nA, and a minimum reverse breakdown voltage of 160 V. Storage and operating temperatures range from -10 °C to +40 °C (ambient) and from -20 °C to +80 °C in nitrogen or vacuum environments.

  5. 5 mm2 Circular Photodiodes For Radiation Detection: AXUV20A Series Datasheet 9/14/2018

    The AXUV20A Circular Photodetectors are designed specifically for radiation, electron, and photon response in the ultraviolet (UV), extreme ultraviolet (EUV), through visible and near-infrared (IR) wavelength ranges. Each circular diode has an active area of a 5.5 mm diameter with excellent sensitivity to low energy electrons.

  6. Directly-Deposited Thin-Film Filter Photodetectors: AXUV100TF400 Datasheet 4/25/2018

    The AXUV100TF400 is a directly-deposited thin-film filter photodetector featuring 100 mm2 square active area for extreme ultraviolet (EUV) detection. The device is designed for use in detecting solar EUV radiation, soft x-ray radiometry, x-ray and EUV lithography, x-ray microscopy and extreme vacuum ultraviolet (XUV) spectroscopy. The AXU100TF400 features typical responsivity of 0.15 A/W at 40 nm with a detection range from 18 nm to 80 nm.

  7. Directly-Deposited Thin-Film Filter Photodetectors: AXUV100TF030 Datasheet 4/25/2018

    The AXUV100TF030 is a directly-deposited thin-film filter photodetector featuring 100 mm2 square active area for extreme ultraviolet (EUV) detection. The device is designed for use in detecting solar EUV radiation, soft x-ray radiometry, x-ray and EUV lithography, x-ray microscopy and extreme vacuum ultraviolet (XUV) spectroscopy.  The AXUV100TF030 features typical responsivity of 0.16 A/W at 3 nm and has a detection range from 1 nm to 12 nm. 

  8. 13.5 nm Directly-Deposited Thin-Film Filter Photodetectors: SXUV100TF135B Datasheet 1/19/2018

    The new SXUV100TF135B 13.5 nm is a directly-deposited thin-film filter photodetectors ideal for electrical performance in many applications, including laser power monitoring, semiconductor photolithography, and metrology systems that utilize extreme ultraviolet light. The SXUV100TF135B is optimized for zero bias voltage operation where low dark current is vital, and it features a high shunt resistance greater than 10 MΩ. It offers excellent stability and robust design for use in extreme ultraviolet environments.

  9. 13.5 nm Directly-Deposited Thin-Film Filter Photodetectors: SXUV100TF135 Datasheet 1/19/2018

    The new SXUV100TF135 13.5 nm is a directly-deposited thin-film filter photodetectors ideal for electrical performance in many applications, including laser power monitoring, semiconductor photolithography, and metrology systems that utilize extreme ultraviolet light. The SXUV100TF135 is optimized for higher speed reverse bias voltage operation, and features low capacitance at 260 pF with a reverse bias voltage of 12 V. It offers excellent stability and robust design for use in extreme ultraviolet environments.

  10. Single-Channel, Two-Stage, Cooled Infrared (IR) Detector: BXT2-17TF Brochure 10/17/2017

    Opto Diode offers a range of high performance lead selenide (PbSe) single-channel uncooled and cooled infrared detectors. These B Series IR detectors offer the best balance of performance and attributes for analyzing materials in the one to five micron spectrum. Key features include high signal to noise performance for a wide measurement dynamic range, high sensitivity, and fast response times for mid-IR applications.