Opto Diode Downloads
-
UV Enhanced Circular Photodetector: UVG5S Datasheet
8/16/2022
The UVG5S photodiode features a circular 5 mm² active area and provides electron detection between 225nm - 400nm with superior UV response with 100% internal quantum efficiency.
-
UV Enhanced Circular Photodetector: UVG20S Datasheet
8/16/2022
The UVG20C photodiode features a circular 24 mm² active area and is ideal for electron detection between 190nm - 400nm with superior UV response with 100% internal quantum efficiency.
-
UV Enhanced Circular Photodetector: UVG20C Datasheet
8/16/2022
The UVG20C photodiode features a 20mm² circular active area in a TO-8 package and is ideal for electron detection between 190nm - 400nm with superior UV response with 100% internal quantum efficiency.
-
UV Enhanced Circular Photodetector: UVG12 Datasheet
8/16/2022
The UVG12 photodiode features a 13 mm² circular active area and no cap (for maximum responsivity), operating from 193nm - 400nm with superior UV response with 100% internal quantum efficiency.
-
UV Enhanced Large Square Photodetector: UVG100 Datasheet
8/16/2022
UVG100 UV Enhanced Large Square Photodetector features stable responsivity over wide temperature and long life in exposure to ultra violet light from 190nm to 400nm.
-
High-Temperature, Wide-Angle Infrared Light-Emitting Diode (IRLED): OD-110WISOLHT Datasheet
6/30/2022
The OD-110WISOLHT is a high-temperature, wide-angle infrared light-emitting diode (IRLED) specially designed for high-temperature applications, such as covert exterior aircraft lighting. The device features a peak emission wavelength of 880 nm and total power output ranging from 60 mW (minimum) up to 120 mW (typical).
-
High-Power GaAlAs IRLED Illuminator: OD-663-850 Datasheet
6/30/2022
The OD-663-850 is a gallium aluminum arsenide (GaAlAs) near-infrared (IR) LED illuminator with ultra-high-power output, the OD-663-850. Specially designed for use in surveillance and night vision applications, the device has a very uniform optical beam with a peak emission wavelength of 850 nm.
-
High-Power GaAlAs IRLED Illuminator: OD-669 Datasheet
5/9/2022
The high-power gallium aluminum arsenide (GaAlAs) IRLED illuminator features a peak emission of 880 nm with an extremely wide angle of emission. Designed with nine chips connected in series, the robust device is housed in an electrically-isolated case, making it ideal for covert aircraft lighting or covert anti-collision lighting in aviation applications.
-
IR Detectors: BXT2S-28T Datasheet
5/17/2021
Opto Diode presents a new, two-stage, cooled, lead selenide (PbSe) detector that operates in the mid-infrared (IR) spectral region with peak sensitivity between 4.3 and 4.5µm. The cooler on the BXT2S-28T allows the detector element to operate as low as -45 °C to maximize detectivity (D*).
-
High-Performance, Two-Stage Lead Selenide (PbSe) Detector Datasheet
4/30/2021
The IR Detectors (B Series) from Opto Diode are high-performance lead selenide (PbSe) single-channel, cooled and uncooled devices. Applications for these detectors include gas analysis, emissions monitoring, spectroscopy, thermal imaging, defense, security, and process control systems.