Opto Diode Downloads

  1. High-Speed, 9 mm² Circular Photodiode For Electron Detection: AXUV63HS1 Datasheet
    12/13/2018

    The AXUV63HS1 high-speed photodetector is designed with a circular active area of 9 mm diameter and is ideally suited for electron detection. This detector features a typical rise time of 10 nsec, a minimum dark current of 100 nA, and a minimum reverse breakdown voltage of 160 V. Storage and operating temperatures range from -10 °C to +40 °C (ambient) and from -20 °C to +80 °C in nitrogen or vacuum environments.

  2. 5 mm2 Circular Photodiodes For Radiation Detection: AXUV20A Series Datasheet
    9/14/2018

    The AXUV20A Circular Photodetectors are designed specifically for radiation, electron, and photon response in the ultraviolet (UV), extreme ultraviolet (EUV), through visible and near-infrared (IR) wavelength ranges. Each circular diode has an active area of a 5.5 mm diameter with excellent sensitivity to low energy electrons.

  3. Directly-Deposited Thin-Film Filter Photodetectors: AXUV100TF400 Datasheet
    4/25/2018

    The AXUV100TF400 is a directly-deposited thin-film filter photodetector featuring 100 mm2 square active area for extreme ultraviolet (EUV) detection. The device is designed for use in detecting solar EUV radiation, soft x-ray radiometry, x-ray and EUV lithography, x-ray microscopy and extreme vacuum ultraviolet (XUV) spectroscopy. The AXU100TF400 features typical responsivity of 0.15 A/W at 40 nm with a detection range from 18 nm to 80 nm.

  4. Directly-Deposited Thin-Film Filter Photodetectors: AXUV100TF030 Datasheet
    4/25/2018

    The AXUV100TF030 is a directly-deposited thin-film filter photodetector featuring 100 mm2 square active area for extreme ultraviolet (EUV) detection. The device is designed for use in detecting solar EUV radiation, soft x-ray radiometry, x-ray and EUV lithography, x-ray microscopy and extreme vacuum ultraviolet (XUV) spectroscopy.  The AXUV100TF030 features typical responsivity of 0.16 A/W at 3 nm and has a detection range from 1 nm to 12 nm. 

  5. Red To Near-IR Enhanced Surface-Mount Photodiode: NXIR-5C Datasheet
    1/22/2018

    The NXIR-5C is a red to near-infrared (NIR) enhanced photodiode ideally designed for laser monitoring, medical diagnostic equipment, industrial automation, scientific measurement, and military applications. The NXIR-5C delivers low reverse bias, high sensitivity at 0.62 A/W @ 850 nm and 0.35 A/W at 1064 nm, low dark current at 1nA, low capacitance of 5 pico-farads (pF) at 10 V, and high shunt resistance greater than 100 MΩ.

  6. 13.5 nm Directly-Deposited Thin-Film Filter Photodetectors: SXUV100TF135B Datasheet
    1/19/2018

    The new SXUV100TF135B 13.5 nm is a directly-deposited thin-film filter photodetectors ideal for electrical performance in many applications, including laser power monitoring, semiconductor photolithography, and metrology systems that utilize extreme ultraviolet light. The SXUV100TF135B is optimized for zero bias voltage operation where low dark current is vital, and it features a high shunt resistance greater than 10 MΩ. It offers excellent stability and robust design for use in extreme ultraviolet environments.

  7. 13.5 nm Directly-Deposited Thin-Film Filter Photodetectors: SXUV100TF135 Datasheet
    1/19/2018

    The new SXUV100TF135 13.5 nm is a directly-deposited thin-film filter photodetectors ideal for electrical performance in many applications, including laser power monitoring, semiconductor photolithography, and metrology systems that utilize extreme ultraviolet light. The SXUV100TF135 is optimized for higher speed reverse bias voltage operation, and features low capacitance at 260 pF with a reverse bias voltage of 12 V. It offers excellent stability and robust design for use in extreme ultraviolet environments.

  8. Single-Channel, Two-Stage, Cooled Infrared (IR) Detector: BXT2-17TF Brochure
    10/17/2017

    Opto Diode offers a range of high performance lead selenide (PbSe) single-channel uncooled and cooled infrared detectors. These B Series IR detectors offer the best balance of performance and attributes for analyzing materials in the one to five micron spectrum. Key features include high signal to noise performance for a wide measurement dynamic range, high sensitivity, and fast response times for mid-IR applications.

  9. Near-Infrared Surface-Mount Photodiode: NXIR-RF100C Datasheet
    2/2/2017

    The NXIR-RF100C is a red and near-infrared (NIR) surface-mount device (SMD) photodiode with spectral response ranging from 320 to 1100 nm. The NXIR-RF100C features an active area of 1 mm2, high responsivity of 0.62 A/W @ 850 nm and 0.35 A/W @ 1064 nm, and an anti-reflective (AR) coated window that provides greater than 98 percent transmission. The device package is ideally designed for laser-monitoring, and rain- and sun-sensor applications in the -40 °C to +125 °C temperature range.

  10. Deep Red Surface-Mount LED: OD-685C Datasheet
    1/24/2017

    The OD-685C, a new deep red, surface-mount device (SMD) light-emitting diode, is designed to deliver outstanding efficiency for applications requiring radiometric measurement with tight spectral bandwidth such as biological analysis, health, science, medical, and veterinary applications. The device has a wide operating temperature range from -65 °C to +125 °C, a typical voltage of 1.8 V with a maximum 2.2 V, and a tight spectral bandwidth of 30 nm at 50 percent.