Datasheet | April 2, 2012

Super High-Power IR Emitters With Very Uniform Optical Beam: OD-110W Datasheet

Source: Opto Diode, An ITW Company

Opto Diode's new series of super high power gallium aluminum arsenide (GaAlAs) infrared (IR) emitters includes the OD-110W which features a very uniform optical beam. This Super High-Power IR Emitters is designed especially for military imaging applications and systems using night vision (NV) imaging technology, such as NV goggles and/or cameras, or for integration into markers and illuminators.

Super High-Power IR Emitters: OD-110W Features

  • Ultra high optical output
  • Four wire bonds on die corners
  • Hermetically Sealed
  • Very uniform optical beam
  • Standard 3-lead TO-39 hermetic package
  • Chip size: 0.026 x 0.026
  • All surfaces gold-plated for added durability