ABOUT OPTO DIODE CORPORATION

Opto Diode Corporation (www.optodiode.com) based in Camarillo, California has a long history of delivering industry-leading photodetectors and LEDs. Available in standard and custom designs, Opto Diode products have supported the photonics industry for over 30 years and earned a reputation for high performance, superior quality and reliability. With the acquisition of International Radiation Detectors (IRD) and the merger of Cal Sensors (CSI), Opto Diode now offers industry-leading performance detectors from the extreme UV to the mid-infrared (mid-IR) regions of the electromagnetic spectrum. The IRD product line detects high energy particles and photons in the UV and X-ray regions.  The CSI detectors provide superior sensitivity to discriminate trace gases or detect heat, sparks or flames in the mid-IR spectrum. 

Complemented by high performance LEDs with radiometric emissions from 365 to 940 nm and IR emitters covering 1 to 10 microns, Opto Diode supports your measurement needs from prototyping to high volume production.  All products are designed and manufactured in the US.  The Opto Diode facility is optimized for manufacturing with on-site wafer fabrication, class 1,000 to 10,000 clean rooms, extensive assembly capabilities and packaging expertise, delivering the products you need to fulfill your design requirements.  Applying rigorous quality control standards, Opto Diode serves a variety of industries including: medical, test & measurement, military/defense, biotechnology, R&D, entertainment, industrial, aerospace and automotive.  For more information, visit www.optodiode.com.

PRODUCTS

High-Speed, 9 mm² Circular Photodiode For Electron Detection: AXUV63HS1 High-Speed, 9 mm² Circular Photodiode For Electron Detection: AXUV63HS1

Opto Diode introduces the AXUV63HS1 as part of their family of AXUV detectors featuring high-performance measurement of electrons, photons, or X-rays. This high-speed photodetector is designed with a circular active area of 9 mm diameter and is ideally suited for electron detection.

5 mm<sup>2</sup> Circular Photodiodes For Radiation Detection: AXUV20A Series 5 mm2 Circular Photodiodes For Radiation Detection: AXUV20A Series

Opto Diode introduces the AXUV20A Circular Photodetectors designed specifically for radiation, electron, and photon response in the ultraviolet (UV), extreme ultraviolet (EUV), through visible and near-infrared (IR) wavelength ranges. Each circular diode has an active area of a 5.5 mm diameter with excellent sensitivity to low energy electrons.

Red To Near-IR Enhanced Surface-Mount Photodiode: NXIR-5C Red To Near-IR Enhanced Surface-Mount Photodiode: NXIR-5C

Opto Diode’s new NXIR-5C is a red to near-infrared (NIR) enhanced photodiode ideally designed for laser monitoring, medical diagnostic equipment, industrial automation, scientific measurement, and military applications. The photodiode features a circular active area of 5 mm2, and delivers spectral response from 320 nm to 100 nm.

Photodetectors With Integrated, Directly-Deposited Thin-Film Filters Photodetectors With Integrated, Directly-Deposited Thin-Film Filters

Opto Diode introduces two new 13.5 nm directly-deposited thin-film filter photodetectors ideal for electrical performance in many applications, including laser power monitoring, semiconductor photolithography, and metrology systems that utilize extreme ultraviolet light. The SXUV100TF135 and SXUV100TF135B feature a 100 mm2 active area, detection capabilities between 12 nm and 18 nm, and a responsivity of 0.09 A/W at 13.5 nm.

Single-Channel, Two-Stage, Cooled Infrared (IR) Detector: BXT2-17TF Single-Channel, Two-Stage, Cooled Infrared (IR) Detector: BXT2-17TF

Opto Diode now offers the new BXT2-17TF single-channel infrared (IR) detector designed to provide excellent sensitivity for industrial carbon monoxide (CO) detection in harsh environments. With an integrated 4.67 µm optical bandpass silicon filter and a thermistor, this thermoelectrically-cooled device features excellent performance and high reliability for long life use.

Near-Infrared Surface-Mount Photodiode: NXIR-RF100C Near-Infrared Surface-Mount Photodiode: NXIR-RF100C

Opto Diode introduces the NXIR-RF100C as a red and near-infrared (NIR) surface-mount device (SMD) photodiode with spectral response ranging from 320 to 1100 nm. The device package is ideally designed for laser-monitoring, and rain- and sun-sensor applications in the -40 °C to +125 °C temperature range.

Deep Red Surface-Mount LED: OD-685C Deep Red Surface-Mount LED: OD-685C

Opto Diode presents the OD-685C, a new deep red, surface-mount device (SMD) light-emitting diode (LED). This new device features 2.0 mW of radiant power at a forward current of 20 mA, a peak wavelength of 685 nm, and a radiant efficiency of 56 percent. The LED is designed to deliver outstanding efficiency for applications requiring radiometric measurement with tight spectral bandwidth such as biological analysis, health, science, medical, and veterinary applications.

Low-Noise Extreme Ultraviolet (EUV) Photodetector Low-Noise Extreme Ultraviolet (EUV) Photodetector

The SXUV20C is a new low-noise extreme ultraviolet (EUV) photodetector that is specially designed for high stability over long periods of time when exposed to high intensity EUV energy. The photodetector features superior responsivity in the 1 nm to 200 nm wavelength region, a large 20 mm2 circular active area that provides a substantial surface for easy alignment to the EUV laser, and superior hardness in extreme UV environments.

Near-Infrared Detectors Near-Infrared Detectors

Opto Diode's new series of near-infrared (NIR) detectors are designed for back-facet laser monitoring applications that require improved performance in the NIR spectrum from 700 nm to 1100 nm. These new photodiodes maximize measurement repeatability and offer a low-cost solution for NIR wavebands.

Wide Temperature Range Infrared Emitter: OD-850WHT Wide Temperature Range Infrared Emitter: OD-850WHT

The new OD-850WHT is a wide temperature range infrared (IR) emitter from Opto Diode designed to simplify thermal design for night vision, aircraft, and vehicle light markers for covert operations in military applications. These emitters also have thermal improvements ideal for high temperature industrial photoelectric controls used in petroleum refining, chemical processing, and power generation and other industrial applications.

13mm<sup>2</sup> Photodiode: UVG12 13mm2 Photodiode: UVG12

The new UVG12 from Opto Diode is a 13mm2 photodiode specifically designed for detection between 193 nm and 400nm at 100 percent internal quantum efficiency in the UV and visible regions. Ideal applications for these devices include laser power monitoring, photolithography, and other high powered density applications using ultraviolet light.

High-Powered GaAlAs Near-Infrared Emitter: OD-110W High-Powered GaAlAs Near-Infrared Emitter: OD-110W

The OD-110W GaAlAs near-infrared (IR) emitter features uniform optical beams with a typical peak emission wavelength of 850 nm, an optical output of 140mW, a chip size of 0.026 in. x 0.026 in., and gold plating on all surfaces. These near-IR light-emitting diodes (near-IRLEDS) are designed for high-powered night vision and surveillance applications...

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CONTACT INFORMATION

Opto Diode, An ITW Company

1260 Calle Suerte

Camarillo, CA 93012

UNITED STATES

Phone: 805-499-0335

Fax: 805-499-8108

Contact: Russell Dahl

NEWS

  • Opto Diode’s AXUV63HS1 - High-Speed, 9 mm² Circular  Photodiode For Electron Detection
    Opto Diode’s AXUV63HS1 - High-Speed, 9 mm² Circular Photodiode For Electron Detection

    Opto Diode Corporation, an ITW company, announces a new high-speed photodetector, the AXUV63HS1.  With a circular active area of 9 mm diameter (typically 63 mm²), the photodiode is ideal for electron detection. The new device joins Opto Diode’s family of AXUV detectors that features high-performance measurement of electrons, photons, or X-rays. 

  • Opto Diode Announces AXUV20HS1, A High-Speed,  5mm² Circular Photodiode For Radiation Detection
    Opto Diode Announces AXUV20HS1, A High-Speed, 5mm² Circular Photodiode For Radiation Detection

    Opto Diode Corporation, an ITW company, introduces a high-speed photodetector with a circular active area of 5 mm diameter (typically 20 mm²). It is ideal for high-speed detection of low-energy electrons or X-rays. The AXUV20HS1 is one of several AXUV detectors that feature high performance measurement of photons, electrons, or X-rays.

  • Opto Diode Announces 5 mm<sup>2</sup> Circular Photodiodes  For Radiation Detection
    Opto Diode Announces 5 mm2 Circular Photodiodes For Radiation Detection

    Opto Diode Corporation, an ITW company, introduces AXUV20A Circular Photodetectors for radiation, electron, and photon response in the ultraviolet (UV), extreme ultraviolet (EUV), through visible and near- infrared (IR) wavelength ranges. The circular device, with an active area of 5.5 mm diameter, features sensitivity to low energy electrons.

  • Opto Diode Announces Extreme Ultraviolet, Directly-Deposited  Thin-Film Filter Photodiodes For Scientific Applications
    Opto Diode Announces Extreme Ultraviolet, Directly-Deposited Thin-Film Filter Photodiodes For Scientific Applications

    Opto Diode Corporation, an ITW company, introduces two photodetectors, the AXUV100TF030 and AXUV100TF400, with 100 mm2 active areas and directly deposited thin-film filters for extreme ultraviolet (EUV) detection.

  • Opto Diode Introduces 13.5 nm Directly-Deposited  Thin-Film Filter Photodetectors
    Opto Diode Introduces 13.5 nm Directly-Deposited Thin-Film Filter Photodetectors

    Opto Diode Corporation, an ITW company, introduces the SXUV100TF135 and SXUV100TF135B photodiodes with integrated thin-film filters. The detectors each feature a 100 mm2 active area and a directly-deposited thin-film filter for detection between 12 nm and 18 nm. Both detectors have typical responsivity of 0.09 A/W at 13.5 nm and are optimized for different electrical performance. The photodiodes are ideal for use in applications such as laser power monitoring, semiconductor photolithography, and metrology systems that utilize extreme ultraviolet light.

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VIDEOS

  • Design Challenge Accepted
    Design Challenge Accepted

    At 2016’s Photonics West, Ray Fontayne provided us with a general overview of Opto Diode and the markets they serve.

  • Avoid Getting Shot!
    Avoid Getting Shot!

    Renee Dulfer walked us through a position detection system demo that Opto Diode had on display at DSS in 2015. Stick around for the whole thing, we promise the video’s title will make sense if you do.

  • The Little Train That Couldn’t Derail
    The Little Train That Couldn’t Derail

    Renee Dulfer spent some of day two of the exhibition with us giving us an overview of Opto Diode’s recent product expansion via of 2014 merger with CalSensors, but the real fun began when she walked us through their in-booth demonstration. For a better look on how their detectors are used in real world applications, check it out.

  • New Detector For Beam Position Monitoring, UV Scanners, And Inspection Tools
    New Detector For Beam Position Monitoring, UV Scanners, And Inspection Tools

    Opto Diode’s national sales manager Stan Duda kept us up to date on some new developments at Opto Diode. Watch the video to learn more about a new EUV compatible position sensing detector covering the 0.1 nm to 400 nm spectral range.

  • Industry’s First EUV-Compatible Position Sensing Detector
    Industry’s First EUV-Compatible Position Sensing Detector

    Stan Duda, national sales manager for ITW-Opto Diode, gives us some background on his company, a manufacturer of silicon photodiodes, LEDs, LED arrays, and UV/X-Ray photodetectors, at Photonics West 2013.

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DOWNLOADS

  • High-Speed, 9 mm² Circular Photodiode For Electron Detection: AXUV63HS1 Datasheet

    The AXUV63HS1 high-speed photodetector is designed with a circular active area of 9 mm diameter and is ideally suited for electron detection. This detector features a typical rise time of 10 nsec, a minimum dark current of 100 nA, and a minimum reverse breakdown voltage of 160 V. Storage and operating temperatures range from -10 °C to +40 °C (ambient) and from -20 °C to +80 °C in nitrogen or vacuum environments.

  • 5 mm2 Circular Photodiodes For Radiation Detection: AXUV20A Series Datasheet

    The AXUV20A Circular Photodetectors are designed specifically for radiation, electron, and photon response in the ultraviolet (UV), extreme ultraviolet (EUV), through visible and near-infrared (IR) wavelength ranges. Each circular diode has an active area of a 5.5 mm diameter with excellent sensitivity to low energy electrons.

  • Directly-Deposited Thin-Film Filter Photodetectors: AXUV100TF400 Datasheet

    The AXUV100TF400 is a directly-deposited thin-film filter photodetector featuring 100 mm2 square active area for extreme ultraviolet (EUV) detection. The device is designed for use in detecting solar EUV radiation, soft x-ray radiometry, x-ray and EUV lithography, x-ray microscopy and extreme vacuum ultraviolet (XUV) spectroscopy. The AXU100TF400 features typical responsivity of 0.15 A/W at 40 nm with a detection range from 18 nm to 80 nm.

  • Directly-Deposited Thin-Film Filter Photodetectors: AXUV100TF030 Datasheet

    The AXUV100TF030 is a directly-deposited thin-film filter photodetector featuring 100 mm2 square active area for extreme ultraviolet (EUV) detection. The device is designed for use in detecting solar EUV radiation, soft x-ray radiometry, x-ray and EUV lithography, x-ray microscopy and extreme vacuum ultraviolet (XUV) spectroscopy.  The AXUV100TF030 features typical responsivity of 0.16 A/W at 3 nm and has a detection range from 1 nm to 12 nm. 

  • Red To Near-IR Enhanced Surface-Mount Photodiode: NXIR-5C Datasheet

    The NXIR-5C is a red to near-infrared (NIR) enhanced photodiode ideally designed for laser monitoring, medical diagnostic equipment, industrial automation, scientific measurement, and military applications. The NXIR-5C delivers low reverse bias, high sensitivity at 0.62 A/W @ 850 nm and 0.35 A/W at 1064 nm, low dark current at 1nA, low capacitance of 5 pico-farads (pF) at 10 V, and high shunt resistance greater than 100 MΩ.

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