Opto Diode Corporation (www.optodiode.com) based in Camarillo, California has a long history of delivering industry-leading photodetectors and LEDs. Available in standard and custom designs, Opto Diode products have supported the photonics industry for over 30 years and earned a reputation for high performance, superior quality and reliability. With the acquisition of International Radiation Detectors (IRD) and the merger of Cal Sensors (CSI), Opto Diode now offers industry-leading performance detectors from the extreme UV to the mid-infrared (mid-IR) regions of the electromagnetic spectrum. The IRD product line detects high energy particles and photons in the UV and X-ray regions. The CSI detectors provide superior sensitivity to discriminate trace gases or detect heat, sparks or flames in the mid-IR spectrum.
Complemented by high performance LEDs with radiometric emissions from 365 to 940 nm and IR emitters covering 1 to 10 microns, Opto Diode supports your measurement needs from prototyping to high volume production. All products are designed and manufactured in the US. The Opto Diode facility is optimized for manufacturing with on-site wafer fabrication, class 1,000 to 10,000 clean rooms, extensive assembly capabilities and packaging expertise, delivering the products you need to fulfill your design requirements. Applying rigorous quality control standards, Opto Diode serves a variety of industries including: medical, test & measurement, military/defense, biotechnology, R&D, entertainment, industrial, aerospace and automotive. For more information, visit www.optodiode.com.
Opto Diode, An ITW Company
1260 Calle Suerte
Camarillo, CA 93012
Contact: Russell Dahl
Opto Diode Corporation, an ITW company, presents the BXT2-17TF, a single-channel, infrared (IR) detector with an integrated 4.67 µm optical bandpass silicon filter. The high-performance lead selenide (PbSe) cooled device provides excellent sensitivity for industrial carbon monoxide (CO) detection in harsh environments.
Opto Diode Corporation recently introduced the NXIR-5C, a red to near-infrared (NIR) enhanced photodiode with a circular active area of 5 mm2. With a spectral response from 320 nm to 1100 nm, the rugged photodiode is housed in a custom 4.7 mm x 4.9 mm ceramic carrier surface-mount device (SMD) package. The new SMD joins the company’s popular NXIR family of products that is optimized for the near-infrared spectrum.
Opto Diode Corporation introduces the NXIR-RF100C, a red and near-infrared (NIR) enhanced, reduced-footprint, surface-mount device (SMD) photodiode showcased at SPIE’s Photonics West 2017, San Francisco, Jan. 31- Feb. 2 in Opto Diode’s booth # 5628.
Opto Diode Corporation, an ITW company, introduces a deep red, surface-mount device (SMD) light-emitting diode (LED) that delivers exceptional efficiency for biological analysis, health, science, medical, and veterinary applications. OD-685C LED features 2.0mW of radiant power at a forward current of 20mA, peak wavelength of 685nm, and radiant efficiency of 56 percent. Typical applications require radiometric measurement with tight spectral bandwidth.
Opto Diode Corporation has recently announced the SXUV20C, a low-noise, extreme ultraviolet (EUV) photodetector that features a large 20 mm² circular active area. The new device has superior responsivity in the 1nm to 200 nm wavelength region, and is specially designed to be stable over long periods of time when exposed to high intensity EUV energy.
At 2016’s Photonics West, Ray Fontayne provided us with a general overview of Opto Diode and the markets they serve.
Renee Dulfer walked us through a position detection system demo that Opto Diode had on display at DSS in 2015. Stick around for the whole thing, we promise the video’s title will make sense if you do.
Renee Dulfer spent some of day two of the exhibition with us giving us an overview of Opto Diode’s recent product expansion via of 2014 merger with CalSensors, but the real fun began when she walked us through their in-booth demonstration. For a better look on how their detectors are used in real world applications, check it out.
Opto Diode’s national sales manager Stan Duda kept us up to date on some new developments at Opto Diode. Watch the video to learn more about a new EUV compatible position sensing detector covering the 0.1 nm to 400 nm spectral range.
Stan Duda, national sales manager for ITW-Opto Diode, gives us some background on his company, a manufacturer of silicon photodiodes, LEDs, LED arrays, and UV/X-Ray photodetectors, at Photonics West 2013.
Opto Diode offers a range of high performance lead selenide (PbSe) single-channel uncooled and cooled infrared detectors. These B Series IR detectors offer the best balance of performance and attributes for analyzing materials in the one to five micron spectrum. Key features include high signal to noise performance for a wide measurement dynamic range, high sensitivity, and fast response times for mid-IR applications.
The NXIR-RF100C is a red and near-infrared (NIR) surface-mount device (SMD) photodiode with spectral response ranging from 320 to 1100 nm. The NXIR-RF100C features an active area of 1 mm2, high responsivity of 0.62 A/W @ 850 nm and 0.35 A/W @ 1064 nm, and an anti-reflective (AR) coated window that provides greater than 98 percent transmission. The device package is ideally designed for laser-monitoring, and rain- and sun-sensor applications in the -40 °C to +125 °C temperature range.
The OD-685C, a new deep red, surface-mount device (SMD) light-emitting diode, is designed to deliver outstanding efficiency for applications requiring radiometric measurement with tight spectral bandwidth such as biological analysis, health, science, medical, and veterinary applications. The device has a wide operating temperature range from -65 °C to +125 °C, a typical voltage of 1.8 V with a maximum 2.2 V, and a tight spectral bandwidth of 30 nm at 50 percent.
The SXUV20C is a new low-noise extreme ultraviolet (EUV) photodetector that is specially designed for high stability over long periods of time when exposed to high intensity EUV energy. Features include high photon flux robustness, minimum shunt resistance of 50 MΩ, reverse breakdown voltage (typical) VR: 1R = 1µa 10 volts, and typical capacitance of C: VR = 0V 3nF.
In order to optimize a detector for enhanced performance levels within their designated applications, it is important to understand the heatsinking of the package. A detector’s thermal resistance is minimized by the proper heat sink selection and mounting by using a thermal interface material.