Opto Diode Downloads

  1. Single Active Area Photodiode: SXUV100 Datasheet 1/8/2014

    The SXUV100 is a photodiode with a 100mm2 active area. It offers remarkable stability after exposure to EUV/UV conditions and provides detection from 1nm to 1000nm.

  2. Quadrant Photodiode: SXUVPS4C Datasheet 11/19/2013

    This datasheet includes electro-optical characteristics as well as thermal parameters for Opto Diode’s SXUVPS4C quadrant photodiode.

  3. RadHard (Radiation Hardened) Photodiode for Electron Detection: UVG20C Datasheet 10/9/2013

    The UVG200C is a RadHard (radiation hardened) photodiode ideal for detecting electrons in space and satellite applications.

  4. UVG100 Photodiode Datasheet 9/16/2013

    Opto Diode’s UVG100 is a photodiode ideal for applications that require extreme stability for detecting vacuum ultraviolet and extreme ultraviolet photons.

  5. High Power, GaAIAs IRLED Illuminator: OD-669-850 Datasheet 8/22/2013

    The OD-669-850  is a GaAIAs (gallium aluminum arsenide) IRLED illuminator ideal for night vision illumination.

  6. 16-Element Photodiode for Electron Detection: AXUV16ELG Datasheet 5/17/2013

    This datasheet includes features, electro-optical characteristics, and thermal properties for the AXUV16ELG 16-element photodiode by Opto Diode.

  7. Ultra-High Optical Output IR Emitters 850nm: OD-250 Datasheet 4/20/2012

    Opto Diode’s New Ultra-High Optical Output IR Emitters (OD-250) provide a total power output of 250mW (typical) with a minimum output at 160 mW. High durability and a peak emission wavelength of 850nm make this emitter making this IR emitter ideal for military imaging and security applications, night vision (NV) imaging technology, such as night vision cameras and/or goggles, and for integration into illuminators and markers.

  8. Super High-Power GaAlAs IR Emitters: OD-110L Datasheet 3/28/2012

    Opto Diode’s Super High-Power GaAlAs IR Emitters: OD-110L features total power output (typical, at 25 degrees C) of 110mW and the minimum output is 55mW with peak emission wavelength at 850 nm.

  9. High Power, Wide Emission Angle IR Emitters: OD-850W Datasheet 3/8/2012

    Hermetically sealed, the standard TO-46 package of Opto Diode’s OD-850W is designed with gold-plated surfaces and welded caps, for added durability. The IR LED offers optical power of 40mW typical at 100mA, continuous forward current at 100mA and peak forward current at 300mA (absolute maximum ratings at 25 degrees C).

  10. High Power, Medium Emission Angle IR Emitters: OD-850L Datasheet 3/8/2012

    Opto Diode’s new high optical output IR emitters, OD-850L, feature a medium emission angle for optimum coverage with excellent power density. These new Medium Emission Angle, High Power Infrared (IR) LEDs are domestically manufactured using highly reliable, liquid-phase epitaxially-grown gallium aluminum arsenide (GaAlAs) and feature greater output power (nearly 50% more) with less degradation and higher stability than the previous products.