Semiconductors

  1. Near-Infrared Surface-Mount Photodiode: NXIR-RF100C 2/2/2017

    Opto Diode introduces the NXIR-RF100C as a red and near-infrared (NIR) surface-mount device (SMD) photodiode with spectral response ranging from 320 to 1100 nm. The device package is ideally designed for laser-monitoring, and rain- and sun-sensor applications in the -40 °C to +125 °C temperature range.

  2. Low-Noise Extreme Ultraviolet (EUV) Photodetector 10/12/2016

    The SXUV20C is a new low-noise extreme ultraviolet (EUV) photodetector that is specially designed for high stability over long periods of time when exposed to high intensity EUV energy. The photodetector features superior responsivity in the 1 nm to 200 nm wavelength region, a large 20 mm2 circular active area that provides a substantial surface for easy alignment to the EUV laser, and superior hardness in extreme UV environments.

  3. Repeatability and Reliability in UV Laser Systems: SXUV300C Photodiode 12/17/2014

    Opto Diode’s SXUV300C is a photodiode with a 331 mm2 active area and the ability to detect energy from UV wavelengths of 1 nm to 1000 nm. It’s been designed to maximize measurement repeatability and reliability in new or existing high-powered UV laser monitoring systems.

  4. Extreme Ultraviolet (EUV) Detection: SXUV20HS1 High Speed Photodiode 9/29/2014

    This high-speed photodiode has a Ø 5 mm circular active area and is ideal for laser power monitoring applications due to its repeatable measurements and stable responsivity. It covers the 1 to 200nm (EUV) range and can dissipate a high-powered UV laser’s optical energy without the usual measurement degradation that typically occurs after prolonged UV exposure.

  5. New Detector For Beam Position Monitoring, UV Scanners, And Inspection Tools 2/10/2014

    Opto Diode’s national sales manager Stan Duda kept us up to date on some new developments at Opto Diode. Watch the video to learn more about a new EUV compatible position sensing detector covering the 0.1 nm to 400 nm spectral range.

  6. Single Active Area Photodiode: SXUV100 1/8/2014

    Opto Diode’s SXUV100 is a highly sensitive 100mm2 photodiode that provides detection from 1nm to 1000nm, with peak photon responsivity at 0.27A/W (at 1nm) and 0.33A/W (at 850nm).

  7. Quadrant Photodiode: SXUVPS4C Datasheet 11/19/2013

    This datasheet includes electro-optical characteristics as well as thermal parameters for Opto Diode’s SXUVPS4C quadrant photodiode.

  8. Photodiode for 2-Axes Positional Centering: SXUVPS4C 11/19/2013

    The SXUVPS4C is a photodiode with a 5 mm2 active area in each of its quadrants. It’s well-suited for 2 axes positional centering applications for lasers in the 13.5 nm to 200 nm wavelength range.

  9. RadHard (Radiation Hardened) Photodiode for Electron Detection: UVG20C 10/9/2013

    This photodiode has several distinctive features, though its most notable feature is its radiation-hardened, junction-passivating, oxynitride protective entrance window. This gives the UVG20C a distinct advantage over traditional silicon photodiodes where space and satellite applications are concerned.

  10. UVG100 Photodiode Datasheet 9/16/2013

    Opto Diode’s UVG100 is a photodiode ideal for applications that require extreme stability for detecting vacuum ultraviolet and extreme ultraviolet photons.