Datasheet | March 28, 2012

Super High-Power GaAlAs IR Emitters: OD-110L Datasheet

Source: Opto Diode, An ITW Company

Opto Diode's Super High-Power GaAlAs IR Emitters: OD-110L features total power output (typical, at 25 degrees C) of 110mW and the minimum output is 55mW with peak emission wavelength at 850 nm. The absolute maximum rating at 25 degrees C (case) for power dissipation is 1000mW, with a continuous-forward-current rating at 500mW. Storage and operating temperatures range from -40 degrees C to 100 degrees C, making these devices suitable for harsh environments and for integration into illuminators and markers, and systems utilizing NV goggles and cameras.