Semiconductor Processing & Production News
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Photodetector With Nanocavities Key To Smaller Optoelectronics
7/10/2017
Researchers at the University of Wisconsin–Madison (UW-Madison) and the University at Buffalo (UB) have developed a very thin yet high-performance photodetector consisting of nanocavities sandwiched between a single-crystalline germanium and a reflective layer of silver.
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Perovskite Nickelate Photodetector Powers Itself
2/13/2017
Researchers have developed a new kind of photodetector that utilizes its built-in semiconducting heterojunction to power itself, rather than rely on external voltage, as typical photodetectors do.
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Qioptiq mag.x system 125 Now Optimized For 35 mm Camera Format Sensors
10/27/2016
Qioptiq, an Excelitas Technologies® Company, recently introduces the new 1.73x Tube Lens as a widely desired addition to the mag.x system 125. Representing a new class of optical systems that enable microscope-like resolution with wide fields-of-view to support modern high-resolution sensors, the 1.73x Tube Lens makes the mag.x system 125 a perfect match for sensors with the 35 mm camera format.
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Sierra-Olympic Offers WDR Shortwave IR Camera Systems
6/15/2016
Sierra-Olympic Technologies offers New Imaging Technologies’ (NIT) wide-dynamic-range (WDR), indium gallium arsenide (InGaAs) shortwave infrared (SWIR) sensors and camera systems. This new SWIR imaging product family delivers a dynamic range greater than 140dB in a single snapshot, without any processing or tone mapping. Ideal for biomedical, laser measurements, welding, semiconductor, art inspection, and process control, the NIT WDR sensors’ internal Fixed Pattern Noise correction offers high uniformity images under all lighting conditions.
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New Miniaturized Laser Enables Cutting-Edge Instrument Designs
6/14/2016
Coherent has recently introduced the new OBIS CORE LS laser which utilizes the unique Optically-Pumped Semiconductor Laser (OPSL) technology inside a scaled-down package optimized for analytical instrumentation. The new OBIS CORE LS measures a miniscule 52 mm x 27 mm x 12 mm—a volume reduction of 84% relative to the standard OBIS—yet delivers uncompromising output power and beam quality at a variety of biologically-useful wavelengths ranging from 488 nm to 594 nm.
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PI Releases New Catalog Of Nanometer-Precision Motion Systems With Magnetic Direct Drives And Air Bearings
6/2/2016
PI (Physik Instrumente) has released a new catalog of its magnetic direct drives and air bearing technology solutions, including actuators, linear stages, multi-axis gantry systems, and customized systems. Application-specific solutions include precision automation in optics and semiconductor manufacturing, assembly, and test equipment.
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Quantum Computer Made Of Standard Semiconductor Materials
12/2/2015
Physicists at the Technical University of Munich, the Los Alamos National Laboratory and Stanford University (USA) have tracked down semiconductor nanostructure mechanisms that can result in the loss of stored information – and halted the amnesia using an external magnetic field.
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Defects In Atomically Thin Semiconductor Emit Single Photons
5/4/2015
Researchers at the University of Rochester have shown that defects on an atomically thin semiconductor can produce light-emitting quantum dots. The quantum dots serve as a source of single photons and could be useful for the integration of quantum photonics with solid-state electronics – a combination known as integrated photonics.
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Harnessing Sunlight With Semiconductor Microspheres Containing Metal Nanoparticles
4/30/2015
A*STAR researchers have performed theoretical calculations to explain why semiconductor microspheres embedded with metal nanoparticles are so good at using sunlight to catalyze reactions.
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Two-Dimensional Semiconductor Comes Clean
4/27/2015
In 2013 James Hone, Wang Fong-Jen Professor of Mechanical Engineering at Columbia Engineering, and colleagues at Columbia demonstrated that they could dramatically improve the performance of graphene—highly conducting two-dimensional (2D) carbon—by encapsulating it in boron nitride (BN), an insulating material with a similar layered structure.