13.5 nm Directly-Deposited Thin-Film Filter Photodetectors

Source: Opto Diode, An ITW Company

13.5 nm Directly-Deposited Thin-Film Filter Photodetectors

Opto Diode introduces two new 13.5 nm directly-deposited thin-film filter photodetectors ideal for electrical performance in many applications, including laser power monitoring, semiconductor photolithography, and metrology systems that utilize extreme ultraviolet light. The SXUV100TF135 and SXUV100TF135B feature a 100 mm2 active area, detection capabilities between 12 nm and 18 nm, and a responsivity of 0.09 A/W at 13.5 nm.

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The SXUV100TF135 is optimized for higher speed reverse bias voltage operation, and features low capacitance at 260 pF with a reverse bias voltage of 12 V. The SXUV100TF135B is optimized for zero bias voltage operation where low dark current is vital, and it features a high shunt resistance greater than 10 MΩ. These photodetectors offer excellent stability and robust design for use in extreme ultraviolet environments. Operating and storage temperatures range from -10 °C to +40 °C in ambient environments, and from -20 °C to +80 °C in nitrogen or vacuum environments.

For additional information on the thin-film filter photodetectors, download the available datasheet.

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