Aerospace & Defense

  1. High-Temperature Infrared Emitter With Narrow Angle Of Emission: OD-110LISOLHT Datasheet 7/16/2020

    The OD-110LISOLHT is a high-power, GaAlAs infrared light-emitting diode (IRLED) illuminator. This device features a narrow angle of emission and a wide temperature rating for use in several industrial and defense/military applications, such as exterior covert lighting on an aircraft.

  2. High-Temperature Infrared Emitter With Narrow Angle Of Emission: OD-110LISOLHT 7/16/2020

    Opto Diode introduces the OD-110LISOLHT as a high-power, GaAlAs infrared light-emitting diode (IRLED) illuminator. This device features a narrow angle of emission and a wide temperature rating for use in several industrial and defense/military applications, such as exterior covert lighting on an aircraft.

  3. Opto Diode Introduces A High-Temperature Infrared Emitter With Narrow Angle Of Emission 7/14/2020

    Opto Diode Corporation, an ITW company, introduces the OD-110LISOLHT, a high-power, gallium aluminum arsenide (GaAlAs) infrared light-emitting diode (IRLED) illuminator.  With a narrow angle of emission and a wide temperature rating, the new IR emitter is ideal for applications in industrial and defense/military tasks, such as exterior covert lighting on aircraft.

  4. High Power, GaAIAs IRLED Illuminator: OD-669-850 Datasheet 8/22/2013

    The OD-669-850  is a GaAIAs (gallium aluminum arsenide) IRLED illuminator ideal for night vision illumination.

  5. High Power, GaAIAs IRLED Illuminator 8/22/2013

    Opto Diode’s OD-669-850 high-power IRLED illuminator provides a very uniform optical beam with an ultra-high optical output from 800 (min) to 1250 mW (typ) and a peak emission wavelength of 850 nm.

  6. Super High-Power GaAlAs IR Emitters: OD-110L Datasheet 3/28/2012

    Opto Diode’s Super High-Power GaAlAs IR Emitters: OD-110L features total power output (typical, at 25 degrees C) of 110mW and the minimum output is 55mW with peak emission wavelength at 850 nm.

  7. Super High-Power GaAlAs IR Emitters: OD-110L 3/28/2012

    Opto Diode's new series of super high power gallium aluminum arsenide (GaAlAs) infrared (IR) emitters includes the OD-110L, which features ultra high optical output with a very narrow optical beam, making it ideal for night vision (NV) and other military imaging applications including integration into illuminators and markers, and systems utilizing NV goggles and cameras. OD-110L is also suitable for harsh environments.

  8. Advanced Photon-Detection Photodiodes 3/21/2012

    Opto Diode provides a full line of semiconductor radiation sensors for detecting photons and other particles. The AXUV-100GX and SXUV-100 absolute devices feature unparalleled quantum efficiency stability and radiation hardness for the measurement of visible, ultraviolet (UV), extreme ultraviolet (EUV), and soft X-ray photons.

  9. High Power, Wide Emission Angle IR Emitters: OD-850W 3/8/2012

    Hermetically sealed, the standard TO-46 package is designed with gold-plated surfaces and welded caps, for added durability. The IR LED offers optical power of 40mW typical at 100mA, continuous forward current at 100mA and peak forward current at 300mA (absolute maximum ratings at 25 degrees C).

  10. High Power, Medium Emission Angle IR Emitters: OD-850L 3/8/2012

    Opto Diode’s new high optical output IR emitters, OD-850L, feature a medium emission angle for optimum coverage with excellent power density. These new Medium Emission Angle, High Power Infrared (IR) LEDs are domestically manufactured using highly reliable, liquid-phase epitaxially-grown gallium aluminum arsenide (GaAlAs) and feature greater output power (nearly 50% more) with less degradation and higher stability than the previous products.