Opto Diode News

  1. Opto Diode Introduces 13.5 nm Directly-Deposited Thin-Film Filter Photodetectors

    Opto Diode Corporation, an ITW company, introduces the SXUV100TF135 and SXUV100TF135B photodiodes with integrated thin-film filters. The detectors each feature a 100 mm2 active area and a directly-deposited thin-film filter for detection between 12 nm and 18 nm. Both detectors have typical responsivity of 0.09 A/W at 13.5 nm and are optimized for different electrical performance. The photodiodes are ideal for use in applications such as laser power monitoring, semiconductor photolithography, and metrology systems that utilize extreme ultraviolet light.

  2. Opto Diode Presents BXT2-17TF - Two-Stage, Cooled, Packaged Infrared (IR) Detector

    Opto Diode Corporation, an ITW company, presents the BXT2-17TF, a single-channel, infrared (IR) detector with an integrated 4.67 µm optical bandpass silicon filter. The high-performance lead selenide (PbSe) cooled device provides excellent sensitivity for industrial carbon monoxide (CO) detection in harsh environments.

  3. Opto Diode’s New NXIR-5C: Red To Near-IR Enhanced Surface-Mount Photodiode

    Opto Diode Corporation recently introduced the NXIR-5C, a red to near-infrared (NIR) enhanced photodiode with a circular active area of 5 mm2. With a spectral response from 320 nm to 1100 nm, the rugged photodiode is housed in a custom 4.7 mm x 4.9 mm ceramic carrier surface-mount device (SMD) package. The new SMD joins the company’s popular NXIR family of products that is optimized for the near-infrared spectrum. 

  4. Opto Diode Introduces Near-Infrared, Surface-Mount Detector

    Opto Diode Corporation introduces the NXIR-RF100C, a red and near-infrared (NIR) enhanced, reduced-footprint, surface-mount device (SMD) photodiode showcased at SPIE’s Photonics West 2017, San Francisco, Jan. 31- Feb. 2 in Opto Diode’s booth # 5628.

  5. Opto Diode Introduces Deep Red Surface-Mount LED

    Opto Diode Corporation, an ITW company, introduces a deep red, surface-mount device (SMD) light-emitting diode (LED) that delivers exceptional efficiency for biological analysis, health, science, medical, and veterinary applications. OD-685C LED features 2.0mW of radiant power at a forward current of 20mA, peak wavelength of 685nm, and radiant efficiency of 56 percent. Typical applications require radiometric measurement with tight spectral bandwidth.

  6. Opto Diode Introduces Low-Noise, Extreme Ultraviolet (EUV) Photodetector

    Opto Diode Corporation has recently announced the SXUV20C, a low-noise, extreme ultraviolet (EUV) photodetector that features a large 20 mm² circular active area.  The new device has superior responsivity in the 1nm to 200 nm wavelength region, and is specially designed to be stable over long periods of time when exposed to high intensity EUV energy.

  7. Opto Diode Introduces A Wide Temperature Range Infrared Emitter

    Opto Diode Corporation recently introduced a new wide temperature range infrared emitter featuring typical optical power output ranges from 24 to 28 mW, a wide emission angle, and operates at extended temperature ranges from -65 to +150°C. This OD-850WHT is designed to operate in demanding military and industrial applications.

  8. Opto Diode Introduces UVG12 - 13 mm² Photodiode

    An ITW company, introduces the UVG12 photodiode with a 4.1 mm diameter active area. With responsivity under test conditions at 254 nm, the minimum A/W is 0.105, typical response is 0.115, with a maximum response of 0.125.

  9. Opto Diode Introduces High-Powered GaAlAs Near-IR Emitters

    Opto Diode an ITW company, introduces the OD-110W GaAlAs near-infrared (IR) Emitters.

  10. Opto Diode’s New High Speed Ø5 mm Photodiode - SXUV20HS1

    Opto Diode, a division of ITW, announces the SXUV20HS1, a high-speed photodiode with a Ø 5 mm circular active area,. The new detector is ideal for extreme ultraviolet (EUV) detection covering 1 to 200 nm. It is designed to dissipate the optical energy of high-powered UV lasers without the typical measurement degradation that occurs with prolonged exposure to UV.