UT Team Fabs 0.08 µm Features at 193 nm

Using an amorphous polyolefin photoresist they developed for 193 nm lithography, a team at the University of Texas (Austin, TX) has generated 0.08-µm design rules on a silicon wafer. The researchers produced the features using a deep-ultraviolet stepper (Integrated Solutions Inc.; Cit, ST) that incorporates an argon fluoride excimer laser (Cymer; San Diego, CA).

DuPont Photomasks Inc. (Round Rock, TX) provided an etched quartz phase shift photomask for the project. The project was funded through Sematech (Austin, TX), a non-profit research consortium of ten leading semiconductor manufacturers.