Temperature Measurement Of Power MOSFETS Using FLIR Thermal Cameras

By Jerry Beeney, FLIR Systems, Inc.

Metal oxide semiconductor field effect transistors (MOSFETs) have inherent design constraints that can create thermal anomalies. As with most electronics, MOSFETs are becoming progressively smaller while, at the same time, demand for greater processing power continues to increase.

As MOSFETs comprise a central processing component in everything from cell phones to desktop computers, the effort to add capability while reducing size is perpetual. This article examines MOSFET design challenges, discusses how thermal imaging can help to overcome those challenges, and introduces FLIR solutions to fit a variety of MOSFET design and testing applications.