Segmented Quad InGaAs Photodiodes

Source: OSI Optoelectronics

OSI Optoelectronics’ Indium Gallium Arsenide (InGaAs) Quad Photodiode series offers extremely low crosstalk between elements, fast response times, and excellent responsivity in the infrared spectrum, from 1100 nm to 1620 nm.

Available in 1 mm and 3 mm diameter active areas, the large active area and wide field of view make them perfect for accurate nulling, position sensing, beam alignment, beam profiling, and many more applications. Stable over time and temperature, OSI’s segmented InGaAs photodiodes are packaged in isolated TO-5 or TO-8 cans with a broadband double-sided AR coated flat window or they can be mounted on ceramic substrates, if desired. For additional features and specifications on this series of InGaAs quadrant photodiodes, download the available datasheet.