News | April 17, 2019

Scientists Design Two-Dimensional Hybrid Perovskite Ferroelectric For Polarized-Light Detection

Two-dimensional hybrid perovskite have attracted intense attention owing to their intriguing physical and photoelectric characteristics. In terms of the structure, two-dimensional hybrid perovskites exhibit distinct compatibility and tenability. Thus organic and inorganic components can be tailored to modulate electronic, optical, and photoelectric properties.

In a study published in J. Am. Chem. Soc., a research group led by Prof. LUO Junhua from Fujian Institute of Research on the Structure of Matter (FJIRSM) of Chinese Academy of Sciences reported a bilayered hybrid perovskite ferroelectric.

Such a bilayered hybrid perovskite ferroelectric was rationally synthesized by introducing a large flexible cation into the typical three-dimensional perovskite MAPbBr3. Researchers found that this perovskite exhibited superior ferroelectricity with a Psvalue of ~3.6 μC/cm2.

Single crystal X-ray experiments revealed that thermally induced order-disorder transformation of organic cations and distortion of inorganic moieties synergistically lead to the ferroelectric-to-paraelectric phase transition.

Based on the intrinsic structure anisotropy, notable carrier transport and intrinsic spontaneous polarization, researchers performed polarized-light detection of this hybrid perovskite ferroelectric. It showed highly polarization-sensitive detection in the short wave region (>2.5 eV). A dichroism ratio of ~2.0 was obtained, corresponding to the maximum and minimum photoresponses along crystallographic c- and a- axes, respectively.

Furthermore, crystal-device of this perovskite ferroelectric showed prominent polarized-light detection performance, including a high photodetectivity (~109 Jones) and fast photoresponse rate (~20 μs).

The study on polarized-light detection of this hybrid perovskite ferroelectric will broaden new branch of two-dimensional members in the class of organic-inorganic hybrid perovskites for the future optoelectronic device applications.

Source: Chinese Academy of Sciences