Download | October 13, 2005

Datasheet: S9251-02 APD For Infrared Enhanced IR Sensitivity

Source: Hamamatsu Corporation
The silicon avalanche photodiode (Si APD) has an internal gain mechanism, fast time response, low dark current and high sensitivity in the UV to near infrared region.

While Avalanche photodiodes are limited to gains below 200, they have excellent quantum efficiency in the near infrared include the S9251 series.

access the Download!

Get unlimited access to:

Trend and Thought Leadership Articles
Case Studies & White Papers
Extensive Product Database
Members-Only Premium Content
Welcome Back! Please Log In to Continue. X

Enter your credentials below to log in. Not yet a member of Photonics Online? Subscribe today.

Subscribe to Photonics Online X

Please enter your email address and create a password to access the full content, Or log in to your account to continue.

or

Subscribe to Photonics Online