IRD Introduces Highly Stable Ultraviolet/Extreme Ultraviolet Photodiodes

Torrance, CA — International Radiation Detectors, Inc. (IRD), the premier manufacturer of semiconductor radiation sensors for detecting photons and other particles, announces the SXUV 100 Ultraviolet/Extreme Ultraviolet (UV/EUV) Photodiode. The photon detector possesses very high radiation hardness and is designed for long-lifetime operation in high particle flux environments with no loss of responsivity.

IRD's SXUV 100 photodiodes feature 10 mm x 10 mm square active area (100 mm²). Diodes with single active areas are available from 1 to 576 mm²; quadrant diodes with several central openings may also be specified. The nitrided metal silicide front window of the SXUV 100 diode permits operation without loss of performance in high humidity and other environmental conditions that normally require sealed packages.

Tested to extraordinary standards, the SXUV 100 photodiode revealed no observable responsivity loss after exposure to billions of 157 and 193 nm pulses and exposure to 8 W/cm2 of CW 248 nm laser irradiance for three weeks.

IRD's advanced sensor technology devices feature unparalleled quantum efficiency stability and have been successfully used in both European SOHO and Coronas-Photon projects and in American SNOE, SORCE, GOES, TIMED and EOS solar space instrumentation. Ideal for applications that require extreme stability for the detection of vacuum ultraviolet and extreme ultraviolet photons, IRD's new SXUV 100 silicon photodiodes are in-stock and are available now.

SOURCE: International Radiation Detectors, Inc. (IRD)