IR-enhanced Si APD (S11519 Series)
Hamamatsu’s S11519 series are silicon avalanche photodiodes (APDs) with improved NIR sensitivity. They feature significantly higher sensitivity to YAG laser light (1.06 µm) compared to our conventional products, making them ideal for YAG laser monitoring and for other NIR applications.
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•IR-enhanced Si APD (S11519 Series) Datasheet
The S11519 series of APDs is a new addition to our family of IR-enhanced products that include silicon PIN photodiodes and CCD image sensors. IR-enhanced detectors and image sensors have a MEMS structure formed on the back side of the device, which results in improved sensitivity to NIR wavelengths (see spectral response graph).
Features:
- Spectral response range: 600-1150 nm
- High sensitivity in the NIR region (peak at 960 nm)
- High gain
- Stable operation at low bias (typically 350 V)
- Configurations: TO-5 package (S11519-10), TO-8 package (S11519-30)
Applications:
- YAG laser monitoring
- NIR light detection
Click Here To Download:
•IR-enhanced Si APD (S11519 Series) Datasheet
More information on Hamamatsu’s Silicon avalanche photodiodes (Si APD)
Visit Hamamatsu’ website for more information.