IR Emitter Devices

A family of infrared data emitters operates at a switch time of 10 nanoseconds. The emitters are suited for high-speed data communications applications, and for use in sensitive systems that require high power and low degradation.

Based on the company's Metal Organic Vapour Phase Epitaxy (MOVPE) process and developed to deliver high-brightness LEDs. The company's indium gallium aluminum arsenide (InGaAlAs) IR emitter devices are expected to be used for new applications, as well as be a direct replacement without requiring design modification. The family of high-speed, high-power emitters is now available in sampling quantities in nine configurations (part numbers SFH4290/4295, SFH4391, SFH4591/4592, SFH4590/4595, and SFH495P/4552).

Siemens Microelectronics, Inc., 10950 N.Tantau Avenue, Cupertino, CA 95014 Phone: 800-77-SIEMENS