Product/Service

Infrared Microscope System For Silicon Interior Inspection

Source: Olympus America Inc.
Packaging technology of semiconductor devices is rapidly advancing together with the increase in the need for thinner and smaller electronic devices. Olympus offers maximum resolution in inspection and analysis of the latest packaging technology

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Brochure: Infrared Microscope System For Silicon Interior Inspection

Nondestructive interior observation of silicon wafers, IC chips, MEMS, and various other semiconductor devices

Packaging technology of semiconductor devices is rapidly advancing together with the increase in the need for thinner and smaller electronic devices.

If an infrared microscope is used, SiP (System in Package), 3-dimensional mounting, CSP (Chip Size Package), and other regions which cannot be seen visually can be inspected and analyzed nondestructively.

With its Infrared Microscope System For Silicon Interior Inspection, Olympus offers maximum resolution in inspection and analysis of the latest packaging technology.

Flip Chip Observation

Flip chip mounting nondestructive defect analysis
In flip chip bonding, after mounting the bonding part, the pattern cannot be inspected with visible light. However, with an infrared microscope system, the silicon chip can be seen through and the interior can be observed without destroying the mounted chip. Defect analysis is easily performed by merely placing the device under the infrared microscope system. Also effective in identifying the positions which should be processed by FIB (Focused Ion Beam).

Wafer Chip CSP

Chip damage caused by environmental testing during development
Device changes during heat test and moisture test can be inspected nondestructively. Leakage due to melting and corrosion of copper wiring, peeling of resin parts, etc. can be positively observed with the Infrared Microscope System For Silicon Interior Inspection.

Silicon Gap Management

Chip gap measurement
Three-dimensional mounting chip gap can be nondestructively measured by the amount of movement of the objective when infrared light is passed through the silicon and focused on the chip and interposer. This method can also be used in the measurement, and of the hollow construction of MEMS.

Wafer Grinding

Wafer grinding measurement
The thinning of devices increases the need for measurement of both sides of the wafers. However, measuring the grinding amount of both sides of laminated wafers in the wafer grinding process was extremely difficult. The infrared microscope system can focus on the front and back of the wafer, and the grinding amount can be measured by means of the amount of Z movement of the objective at that time.

Click Here To Download:
Brochure: Infrared Microscope System For Silicon Interior Inspection