Technical Paper: Hyperspectral CMOS Imager

This paper will describe the design and initial test of a CMOS sensor for use in hyperspectral applications. This device has been designed to give as high a dynamic range as possible with minimum cross-talk. The sensor has been manufactured on high-resistivity epitaxial silicon wafers and is back-thinned and left relatively thick in order to obtain the maximum quantum efficiency across the entire spectral range.