Hamamatsu Introduces New Si APDs For 800 nm Measurements

The S10341 series of silicon avalanche photodiodes (APD) offer high sensitivity at 800 nm, making them suitable for use in optical rangefinders, laser radars, and free space optics (FSO). These APDs exhibit a quantum efficiency of 75% at 800 nm and are sensitive within 400 nm to 1000 nm. Other features include low noise, high-speed response, and stable operation at low bias. The S10341 series also has a small, thin package measuring 1.8 mm x 3.1 mm x 1.0 mm.

Two configurations in the S10341 series are available. The S10341-02 photosensitive area has a 0.2 mm diameter. At 100X gain, it has a typical cutoff frequency of 1000 MHz and 50 pA dark current. The S10341-05 has a larger photosensitive area, 0.5 mm in diameter. Its typical cutoff frequency and dark current are 900 MHz and 100 pA, respectively, at 100X gain.

About Hamamatsu Corporation
Hamamatsu Corporation is the North American subsidary of Hamamatsu Photonics K.K. (Japan), a leading manufacturer of devices for the generation and measurement of infrared detectors, photoconductive detectors, and image sensors. The parent company is dedicated to the advancement of photonics through extensive research. This corporate philosophy results in state-of-the-art products which are used throughout the world in scientific, industrial, and commercial applications.

SOURCE: Hamamatsu Corporation