Focused Ion Beams

Focused Ion Beam (FIB) systems play a crucial role in integrated circuit (IC) failure analysis and modification. These systems, when combined with photon-counting avalanche photodiode (APD) modules and shortwave infrared (SWIR) imaging using InGaAs cameras, enable precise fault localization and correction. Photon emission microscopy captures faint emissions from faulty transistors or overloaded nodes, allowing engineers to view and analyze the circuit through the IC substrate. This is made possible by cooled InGaAs focal plane arrays (FPAs), which offer the necessary sensitivity to detect low-level photon emissions through either the backside or front side of a chip, depending on structural visibility.

Once a fault is identified, FIB tools can actively modify the circuit to resolve the issue, improving throughput and enhancing the effectiveness of failure analysis. Outside of the FIB vacuum system, room-temperature InGaAs area cameras mounted on SWIR-optimized microscopes are used to examine and verify circuit layouts on wafers and die. These high-resolution inspections help designers plan modifications and confirm physical changes post-modification.

SWIR imaging is not only effective for standard ICs but also for inspecting nano-structures in Micro-Electro-Mechanical Systems (MEMS). For large-scale silicon wafer and MEMS inspection, InGaAs line scan cameras mounted on microscopes with motorized stages provide maximum resolution and throughput.

By integrating SWIR imaging technology into the FIB inspection workflow, engineers gain a powerful, non-invasive toolset for identifying, modifying, and validating circuit integrity, significantly accelerating development cycles and improving product reliability in semiconductor manufacturing.