Datasheet: InGaAs APD Receiver Modules

Esterline CMC Electronics' 200µm InGaAs Avalanche Photodiode Preamplifier Module with TEC 264-339759-000 uses a low noise InGaAs APD with an ionization ratio of 0.2 with a Gasfet input transimpedance amplifier in a 12-lead TO-8 package. Each amplifier has an overload input protection circuit for fast recovery. The output can be AC or DC coupled to a 100 ohm load. An internal TEC allows temperature control of the APD. The APD temperature is monitored by an internal thermistor.

InGaAs APD Receiver Modules Features:

• 50MHz bandwidth
• Low k of 0.2 (Low noise) InGaAs APD
• Low power TEC
• High Quantum Efficiency
• Low Noise Equivalent Power NEP
• Spectral Response: 1000 to 1600 nm
• Fast overload recovery
• Hermetically-Sealed TO-8 Package
• MIL-PRF-38534

InGaAs APD Receiver Modules Applications:

• Range Finding
• LIDAR
• Laser Profiling
• Free –Space Optical Communication Systems