CMOSIS Offers 4.2 Megapixel/180 fps CMOS Image Sensor For The Near Infrared
At Vision 2010, CMOSIS will introduce a new member of its standard high-end CMOS image sensor family: the 4.2 megapixel CMV4000E12. The new off-the-shelf image sensor features a square 5.5 x 5.5 µm (2048 x 2048) pixel format. It offers high NIR sensitivity, low noise, central shutter and full frame rate of 180 fps. The CMV4000 is perfectly suited for advanced applications in the visible and near infrared spectrum. CMOSIS exhibits in Hall 4/Booth D78.
The new CMOSIS CMV4000E12 realizes a dynamic range of 60 dB, extendable up to 90 dB through several HDR (high dynamic range) operational modes. The sensor's low sensitivity (1:50,000) to parasitic light results in a very effective electronic shutter.
The unique feature of the CMV 4000 is its novel pixel structure, which combines pipelined global shutter operation with correlated double sampling (CDS). This technique, pioneered by CMOSIS, yields an unprecedented low noise level below 13 e- and a high full well charge of 13,500 electrons.
The built-in A/D converter can be operated at 10-bit or 12-bit resolution. In the faster 10-bit mode, 180 full frames per second are achieved. At 12-bit, the CMV4000E12 operates at 37 fps. The sensor's advanced architecture allows for row windowing and row sub-sampling. Up to eight windows can be defined.
The CMV4000E12 offers 16 LVDS output channels at 480 Mbit/sec each. They can be multiplexed to 8, 4 or 2 channels at a reduced data rate. Pipelined operation allows for integrating a frame during readout of the foregoing frame.
Imager control and readout are programmable via serial interface. An internal runtime generator generates all signals for readout and exposure control. External trigger is usable at all times.
The new image sensor is housed in the very compact 95-pin ceramic µPGA measuring just 18,6 x 18,6 mm. Operating temperature covers the range of -30 ºC to +70 ºC. Power consumption is a low 600 mW.
CMV4000E5 is fabricated on a thin 5 µm epi substrate, which suits industrial applications across the visible spectrum. For applications extending to the near infrared, such as security, automotive, night-vision, inspection and distance measurement, CMOSIS offers the CMV4000E12 on a thicker,12 µm epi substrate. This substantially increases the quantum efficiency at wavelengths above 600 nm. At 900 nm, QE is doubled from about 8 to 16 percent.
Additionally, the CMV2000E12 is available featuring a 2.2 megapixel format. CMV2000 was introduced by CMOSIS in 2009. It offers a frame rate of more than 300 fps at full resolution, a high-performance 10-bit column ADC, a slower 12-bit mode and multiple HDR modes.
CMV4000 and CMV2000 are offered in three different versions: monochrome with or without microlenses, and a color version equipped with RGB Bayer pattern and microlenses. The monochrome and RGB color versions (CMV2000E5 and CMV4000E5) are currently available in volume quantities. The extended monochrome versions CMV2000E12 and CMV4000E12 with micro lenses are available in sample quantities.
The CMOSIS technology portfolio contains crucial IP related to various advanced aspects of image sensors – among them high pixel counts at a high fill factor, high-speed functionality, large bit-depth of column ADCs, high dynamic range, TDI (time-delay and integration) implementation in CMOS and novel rad-hard pixel concepts
About CMOSIS
CMOSIS is a pure-play supplier of standard off-the-shelf and application-specific CMOS image sensors for the industrial and professional market covering applications such as machine vision, scientific, medical, automatic data capture and space. CMOSIS was conceived as a fabless CMOS image sensor vendor providing in-house design, characterization and qualification facilities for research, development and volume production. CMOSIS currently employs close to 30 people and is headquartered in Antwerp, Belgium.
SOURCE: CMOSIS