500µm Silicon Avalanche Photodiode Preamplifier Module 50MHz
Source: CMC Electronics
CMC's 264-339730-002 50MHz 500µm Silicon Avalanche Photodiode Preamplifier Modules use a low noise Silicon APD with an ionization ratio of 0.04 with a Gasfet cascade configuration transimpedance amplifier in a 12-lead TO-8 package. The amplifier uses an internal 68 kO feedback resistor with an overload input protection circuit for fast recovery. The output can be AC coupled to a 50 ohm load or DC coupled to a 100 ohm load referenced to –1 volt.
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500µm Silicon Avalanche Photodiode Preamplifier Module 50MHz Datasheet
500µm Silicon Avalanche Photodiode Preamplifier Module 50MHz Datasheet
500µm Silicon Avalanche Photodiode Preamplifier Module 50MHz Datasheet
These 500µm Silicon Avalanche Photodiode Preamplifier Module applications involving LIDAR, laser profiling, and range finding and also in free-space optical communication systems.
Features:
- System bandwidth DC to 50MHz (-3 dB)
- Silicon APD, k of 0.04, 500um active area
- NEP25°C
- 0.01 pW/vHz typical @ 900 nm
- Spectral Response Range: 400 to 1100 nm
- Fast overload recovery
- Hermetically sealed TO-8 package
- Screening level
- -002: Industrial grade
Additional information can be found on the available datasheet. You can contact us for additional information on our 50MHz 500µm Silicon Avalanche Photodiode Preamplifier Module
Click Here To Download:500µm Silicon Avalanche Photodiode Preamplifier Module 50MHz Datasheet
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