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Technical Paper: Hyperspectral CMOS Imager
Source: e2v technologies
This paper will describe the design and initial test of a CMOS sensor for use in hyperspectral applications. This device has been designed to give as high a dynamic range as possible with minimum cross-talk. The sensor has been manufactured on high-resistivity epitaxial silicon wafers and is back-thinned and left relatively thick in order to obtain the maximum quantum efficiency across the entire spectral range.
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