Opto Diode's unique IRD line of AXUV 100GX photodiodes features a large (10 mm x 10 mm square) active area with room-temperature operation and a small detector footprint. Simple to use and, unlike any other X-ray detectors on the market, the IRD X-ray detector requires no external voltage for operation. The nitrided-oxide front window of the AXUV 100GX diode provides up to a Gigarad (SiO2) of radiation hardness which is 10,000 times greater than standard PIN silicon photodiodes. Photodiodes with directly-deposited, thin-metallic filters are available for reducing response to visible light by several orders of magnitude.
X-ray responsivity measurements performed at PTB Germany confirm the responsivity of AXUV 100GX devices can be calculated from their known silicon thickness.
The advanced sensors are used internationally by synchrotron scientists and by space scientists for the solar spectrum studies. AXUV 100 GX X-ray photodetectors are manufactured domestically and available for shipping now from Opto Diode's Southern California facility.