Datasheet | June 6, 2008

Datasheet: High-Power GaAlAs IR Emitter Chips: Model OD-880-C

Source: Opto Diode, An ITW Company
Features of High-Power GaAlAs IR Emitter Chips include: high reliability LPE GaAlAs IRLED chips, graded-bandgap LED structure for high radiant power output, 880nm peak emission, good ohmic contacts (gold alloys), and good bondability.