80 and 200um InGaAs Avalanche Photodiodes
Source: CMC Electronics
Esterline CMC Electronics' InGaAs APD was designed for applications requiring fast overload recovery in the NIR (1000 to 1600nm) wavelength band such as eye safe range finding where a strong reflective target would mask a weaker one yielding false readings. Low leakage current NEP and a large delta V provide reliable operation in a wide range of environmental conditions.
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•80 and 200um InGaAs Avalanche Photodiode -264-339767 Datasheet
•80 and 200um InGaAs Avalanche Photodiode -264-339767 Datasheet
•80 and 200um InGaAs Avalanche Photodiode -264-339767 Datasheet
264-339767 InGaAs APD Applications
- Range Finding / LIDAR
- Instrumentation
- Laser Profiling
- Free–Space Communications
- Industrial
- Medical
- Photometry
264-339767 InGaAs APD Features
- Low k of 0.17
- VBD – VM=10 > 5V
- Low NEP
- Fast Overload Recovery
- Wide Operating Temp Range
- Hermetic TO-46/TO-18 Case
•80 and 200um InGaAs Avalanche Photodiode -264-339767 Datasheet