Product/Service

200µm InGaAs Avalanche Photodiode Preamplifier Module

Source: CMC Electronics
CMC's 264-339730-501/551 use a low noise InGaAs APD with an ionization ratio of 0.2 with a Gasfet cascode configuration transimpedance amplifier in a 12-lead TO-8 package. The amplifier uses an internal 68 kW feedback resistor with an overload input protection circuit for fast recovery. The output can be AC coupled to a 50 ohm load or DC coupled to a 100 ohm load referenced to –1 volt.

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•200µm InGaAs Avalanche Photodiode Preamplifier Module Datasheet

These 200µm InGaAs Avalanche Photodiode Preamplifier Modules LIDAR, laser profiling, and range finding and also in free-space optical communication systems.

Features

  • System bandwidth DC to 50MHz (-3 dB)
  • Low k of 0.2 (low noise) InGaAs APD
  • 200um active area
  • High quantum efficiency
  • Low Noise Equivalent Power NEP
  • Spectral response range: 1000 to 1600 nm
  • Fast overload recovery
  • Hermetically sealed TO-8 package
  • Screening level
    • 501: Industrial grade
    • 551: MIL-PRF-38534
Additional information can be found on the available datasheet. You can contact us for additional information on our 200µm InGaAs Avalanche Photodiode Preamplifier Modules.

Click Here To Download:
•200µm InGaAs Avalanche Photodiode Preamplifier Module Datasheet