Products and Services

With a wide range of single and multi-element configurations available, the new Series Q Single and Quadrant Photodiodes provide the highest quantum efficiency of any silicon photodiode at 1064nm (> 35%) as well as low dark current and low capacitance. Additionally, standard quadrant and multi-element configurations produce low cross talk (<2%).

The new Series Q Single and Quadrant Photodiodes for 1064nm are available with standard size active areas including 45mm2, 100mm2 and 154 mm2. A variety of packages is available including TO metal cans, SMD ceramic packages and customized solutions.

Applications:
Fast rise times make the Series Q Single and Quadrant Photodiodes well suited for laser range finding, target designation or any application detecting YAG lasers or similar NIR emitters.

For more information, please download the datasheet from the table below or contact us for more information, samples or your custom requirements.

Single and Quadrant Photodiodes for 1064nm

1064 Enhanced Photodiodes
Type No.			Active Area		Dark Current	Rise Time	Datasheet
Order Number	Chip	Package	Size (mm)	Area (mm2)	at 150 V  (nA)	at 150 V, 1064 nm, 50 Ω (ns)	(download)
501273	PS100-Q	BNC	10 x 10	100	80	6
1064 Enhanced Quadrant Photodiodes
Type No.			Active Area		Dark Current	Rise Time	Datasheet
Order Number	Chip	Package	Size (mm)	Area (mm2)	at 150 V  (nA)	at 150 V, 1064 nm, 50 Ω (ns)
501049	QP22-Q	TO8i	Ø 5.33	4 x 5.67	8	5
501048	QP45-Q	TO8i	6.7 x 6.7	4 x 11	20
501272	QP100-Q	LCC10*	10 x 10	4 x 11		6
500798	QP154-Q	TO1032i	Ø 14.0	4 x 38.5

*surface mount available with clear epoxy, silicone and glass or fused silica window

Click here to visit Silicon Sensor's website for more information on Single and Quadrant Photodiodes.

---

Free Photonics Online Newsletter