Products and Services
Silicon NIR Avalanche Photodiodes: Arrays
Source:
First Sensor AG
Silicon NIR Avalanche Photodiode Arrays (Series 9) from Silicon Sensor International AG are optimized for 760-910 nm with QE>80%. Applications include LIDAR, Laser Range finding, automotive sensors, and general-speed, low-light-level detection.
Optimized for 900 nm, NIR, these 8 and 16 Element Avalanche Photodiode Arrays from Silicon Sensor have good uniformity, high-speed, low noise and a low slope multiplication curve.
Applications include LIDAR, Laser Range finding, automotive sensors, and general-speed, low-light-level detection.
APD arrays, Hybrid modules and a full custom design service are available.
Click here to visit Silicon Sensor's website for more information on these Avalanche Photodiodes.
Special Features
|
Silicon NIR Avalanche Photodiodes: Arrays
|
Full custom design service for Application Optimised Solutions
| Order number | Type no. | Active area | Dark current* | Capacitance* | Rise time (ns) | Datasheets (Download) | |
| Chip | Package | Size (µm) | M = 100 (nA) | M = 100 (pF) | M = 100 | ||
| NEW 501098 | 16AA0.13-9 | SOJ22GL | 648 x 208* | 1.0 | 0.5 | 1-2 |  |
| 500038 | 16AA0.13-9 | DIL18 | 648 x 208* | 1.0 | 0.5 | |
|
| NEW 501097 | 16AA0.4-9 | SOJ22GL | 1000 x 405* | 2.0 | 1.0 | |
|
| NEW 501099 | 8AA0.4-9 | SOJ22GL | 1000 x 405* | 2.0 | 1.0 | |
|
| 50130801 | 25AA0.04-9 | LBGA | 205 x 205* | 0.3 | 0.5 | |
|
| 50130901 | 25AA0.16-9 | LBGA | 405 x 405* | 1.2 | 1.0 | |
|
| 50130701 | 64AA0.04-9 | BGA | 205 x 205* | 0.3 | 0.75 | |
|
| NEW 501207 | QA4000-9 | TO8Si | Ø 4000 (quad) | 4.0 | 7.0 | |
|
*per element
Need More Information? Just Ask.
Click the button below to directly contact the supplier. Use it to:
- Ask a question.
- Request more detailed information or literature.
- Discuss your current project/application.
- Request a quote.
- Locate a distributor in your area.
- Schedule a demo.
