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Red Enhanced Avalanche Photodiode APDs
Silicon Sensor International
Red Enhanced Avalanche Photodiodes (Series 12) from Silicon Sensor International AG are optimized for the wavelength range of 550 nm to 750 nm with a peak response of 0.5 A/W for red light sources.
The Red Enhanced Avalanche Photodiodes (APDs) series features very high quantum efficiencies of up to 94%, high cut-off frequencies of up to 3 GHz, high gain at low voltages and an ultra low temperature coefficient. The series 12 APDs are especially designed to suit high performance distance measurement applications using 635 nm…660 nm laser diodes.
The Red Enhanced Avalanche Photodiode (APDs) series comprises standard size active areas with 100 µm, 230 µm and 500 µm diameter. A variety of packages is available including TO metal cans, SMD ceramic packages and customized solutions. Please contact us for more information, samples or your special requirements.
Click Here To Download:•Datasheet: Red Enhanced Avalanche Photodiode (APDs)
Special Features
- High speed in the visible range
- Up to 3GHz cut off frequency
- Ultra low temperature coefficient
- Very high sensitivity in visible range
- Low bias operation
| Order number |
Type No. |
Active Area |
Spectral Responsivity (A/W) | Capacitance (pF) | Cut-off frequency (GHz) | |||
| Chip | Package | Size (mm) | Area (mm²) | 660 nm M = 100 | M = 100 | 22 °C | 660 nm, 50 Ω | ||
| 501163 | AD500-12 | TO52S1 |
Ø 0,5
|
0,196 | 50 | typ. 4,5 | typ. 3, min. 2 |  |
 |
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| 501155 | AD500-12 | LCC6.1 |
Ø 0,5
|
0,196 | 50 | typ. 4,5 | typ. 3, min. 2 | |
|
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| 501157 | AD230-12 | LCC6.1 |
Ø 0,23
|
0,042 | 50 | typ. 1,5 | typ. 3, min. 2 | |
|
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| 501162 | AD230-12 | TO52S1 |
Ø 0,23
|
0,042 | 50 | typ. 1,5 | typ. 3, min. 2 | |
|
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