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Red Enhanced Avalanche Photodiode APDs

Source: First Sensor AG

Red Enhanced Avalanche Photodiodes (Series 12) from Silicon Sensor International AG are optimized for the wavelength range of 550 nm to 750 nm with a peak response of 0.5 A/W for red light sources. This photodiode series is ideal for laser range finders, high speed photometry, high speed optical communications, and medical equipment.

Details

The Red Enhanced Avalanche Photodiodes (APDs) series features very high quantum efficiencies of up to 94%, high cut-off frequencies of up to 3 GHz, high gain at low voltages and an ultra low temperature coefficient. The series 12 APDs are especially designed to suit high performance distance measurement applications using 635 nm…660 nm laser diodes.

The Red Enhanced Avalanche Photodiode (APDs) series comprises standard size active areas with 100 µm, 230 µm and 500 µm diameter. A variety of packages is available including TO metal cans, SMD ceramic packages and customized solutions. Please contact us for more information, samples or your special requirements.

Click here to visit silicon Sensor's website for more information on Red Enhanced Avalanche Photodiodes.

Special Features

High speed in the visible range
Up to 3GHz cut off frequency
Ultra low temperature coefficient
Very high sensitivity in visible range
Low bias operation

Applications

Laser range finder
High speed photometry
High speed optical communications
Medical Equipment

Order number

Type No.

Active Area

Dark current (nA)

Capacitance

Cut-off frequency

Datasheets (Download)

Chip

Package

Size (mm)

Area (mm²)

at M = 100

M = 100 (pF)

M = 100 (GHz)

preliminary

AD100-12

TO52S1

Ø 0.100

0.0078

0.05

0.5

preliminary

AD100-12

SMD*

501162

AD230-12

TO52S1

Ø 0.230

0.042

0.20

1.5

501157;
501156;
501820

AD230-12

SMD*

501163

AD500-12

TO52S1

Ø 0.500

0.196

0.30

4.5

501155;
501154;
501819

AD500-12

SMD*

*also available with band pass filter 635 nm; 650 nm

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