Products and Services
1064 nm Enhanced Avalanche Photodiodes (APD)
Source:
First Sensor AG
Silicon Sensor 1064 nm Avalanche Photodiode are designed for high quantum efficiency (>30 A/W @ 1064 nm) and fast rise times. This Avalanche Photodiode is well suited for laser range finding, target designation or any application detecting YAG laser and similar NIR emitters.
The Series 10 Avalanche Photodiode are designed for use at 1064nm, offering unique performance and high quantum efficiency at this longer wavelength (>30 A/W @ 1064nm). Features include low capacitance and fast rise time. These devices are well suited for laser range finding, target seeking, or any application detecting YAG lasers or similar NIR emitters. Quadrant arrays and a full custom design service are available.
- High Q.E. at 1064nm
- Low Dark Current and Capacitance
- Fast Rise time
- Quadrant Arrays
- Full custom design service for customer
Applications
- Pulsed 1064 nm laser detection
- Laser range finding
- Fluorescence detection
- Light source positioning (Quadrant APD)
- Laser alignment (Quadrant APD)
| Order number | Type No. | Active Area | Dark Current (nA) | Breakdown voltage (V) | Datasheet (Download) | ||
| Chip | Package | Size (mm) | Area (mm2) | at M = 100 | at ID = µA | ||
| 500953 | AD500-10 | TO5i | Ø 0.50 | 0.196 | 1.5 | 220... 550** |  |
| 501233 | AD800-10 | TO5i | Ø 0.80 | 0.5 | 3 | |
|
| 500883 | AD1500-10 | TO5i | Ø 1.50 | 1.77 | 7 | |
|
| 501234 | AD4000-10 |
TO8Si |
Ø 4.00 | 12.56 | 50 | |
|
| Multi-Element Arrays | |||||||
| 501174 | QA4000-10 |
TO8Si |
Ø 4.00 | 12.56 / 4 | 12.5* | 220... 550** | |
| Hybrid | |||||||
| 501387 | AD800-10 | TO8Si | Ø 0.80 | 0.5 | 3 | 220... 550** | |
per element ** Ubr - binning possible
Click here to visit Silicon Sensor's website for more information on 1064 nm Enhanced Avalanche Photodiodes.
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