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1064 nm Enhanced Avalanche Photodiodes (APD)
Silicon Sensor International
Silicon Sensor 1064 nm Avalanche Photodiode are designed for high quantum efficiency (>30 A/W @ 1064 nm) and fast rise times. This Avalanche Photodiode is well suited for laser range finding, target designation or any application detecting YAG laser and similar NIR emitters.
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•Datasheet: Series 10 1064 nm Enhanced Avalanche Photodiodes (APD)
•Datasheet: Series 10 1064 nm Enhanced Avalanche Photodiodes (APD)
•Datasheet: Series 10 1064 nm Enhanced Avalanche Photodiodes (APD)
The Series 10 Avalanche Photodiode are designed for use at 1064nm, offering unique performance and high quantum efficiency at this longer wavelength (>30 A/W @ 1064nm). Features include low capacitance and fast rise time. These devices are well suited for laser range finding, target seeking, or any application detecting YAG lasers or similar NIR emitters. Quadrant arrays and a full custom design service are available.
- High Q.E. at 1064nm
- Low Dark Current and Capacitance
- Fast Rise time
- Quadrant Arrays
- Full custom design service for customer
•Datasheet: Series 10 1064 nm Enhanced Avalanche Photodiodes (APD)
| Order number |
Type No. |
Active Area |
Dark current (nA) | Breakdown voltage (V) | |||
| Chip | Package | Size (mm) | Area (mm²) | M = Vop | |||
| 500953 | AD500-10 | TO5i |
Ø 0,5
|
0,2 | 5 | 320 - 500 |  |
 |
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| 500883 | AD1500-10 | TO5i |
Ø 1,5
|
1,77 | 10 | 300 - 500 | |
|
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