Download Library
Title |
Abstract | Posted |
Size |
|---|---|---|---|
| Datasheet: Deschutes BSI™ M Backside- Illuminated Reduced-Noise Avalanche Photodiode (R-APD) w/Sub-Mount: VFC 1000 Series | The Deschutes BSI M Backside- Illuminated Reduced-noise Avalanche Photodiode (R-APD) w/Sub-mount: VFC 1000 Series is available in 30-µm, 75-µm, and 200-µm active area versions. The backside-illuminated operation of the Deschutes BSIT M reduced-excess-noise avalanche photodiodes (R-APDs) provides both higher responsivity and lower capacitance than competing frontside-illuminated APDs. | 03/16/2010 | 389.2 KB |
| Datasheet: Fiber-Optically Coupled (MM 62.5/125) 2.3-GHz Deschutes BSI™ R-APD Photoreceiver: RIC1-JJQC | Voxtel RIC1-JJQC - A fiber-pigtailed near-infrared (NIR) photoreceiver incorporating a low-noise transimpedance amplifier (TIA) and a thermo-electrically (TE)-cooled backside-illuminated (BSI) InGaAs/InAlAs (950–1700 nm) reduced excess noise APD (R-APD). | 03/16/2010 | 106.3 KB |
| Datasheet: 2.3-GHz Deschutes BSI™ Photoreceiver w/ 75-µm Backside-Illuminated R-APD: RIC1-JJAC | Voxtel RIC1-JJAC - A near-infrared (NIR) photoreceiver incorporating a low-noise transimpedance amplifier (TIA) and a thermoelectrically (TE)-cooled backside-illuminated (BSI) InGaAs/InAlAs (950–1700 nm) reduced excess noise APD (R-APD). | 03/16/2010 | 138.8 KB |
| Datasheet: 300-MHz Deschutes BSI™ Photoreceiver w/ 200-µm Backside-Illuminated R-APD: RDC1-NJAC | Voxtel RDC1-NJAC - A near-infrared (NIR) photoreceiver incorporating a low-noise transimpedance amplifier (TIA) and a thermoelectrically (TE)-cooled backside-illuminated (BSI) InGaAs/InAlAs (950–1700 nm) reduced excess noise APD (R-APD). | 03/16/2010 | 138.9 KB |
| Pulsed Laser Diodes/Avalanche Photodiodes Catalog | This catalog presents our wide range of pulsed laser diodes, avalanche photodiodes and accessories clearly and concisely. | 03/15/2010 | 0.98 MB |
| Company Profile And Product Brochure | Long-term relationships with companies on six continents have made LASER COMPONENTS a company that is engaged worldwide. | 03/15/2010 | 2.37 MB |
| Tech Brief: NASA-Inspired Shape-Sensing Fibers Enable Minimally Invasive Surgery | Minimally Invasive Surgery (MIS) is a new class of surgical procedures in which the operation is performed with surgical instruments inserted through small incisions in the body. In contrast to open surgery, in which the organ or tissue is exposed through large incisions in the body, MIS procedures generally allow for faster recovery time, less pain and trauma, reduced risk of infection, and shorter hospital stays. | 03/11/2010 | 29.2 KB |
| Video: Shape Sensing Technology / 3D Shape Sensing Demonstration | Luna's shape sensing optical fiber knows its own position in 3D space at every discrete point along its length and can be used to track the exact position of an object to which it is attached. | 03/11/2010 | 8.86 MB |
| Application Note: APD Detector Arrays For LIDAR Systems | To meet the growing need for avalanche photodiode arrays for LIDAR systems Silicon Sensor International, a leading manufacturer of silicon based detectors, announces new matrix APD arrays suitable for LIDAR systems. | 03/11/2010 | 395.4 KB |
| Datasheet: SU640KTSX Highest Sensitivity Shortwave IR Camera w/ Enhanced Dynamics | The compact SU640KTSX-1.7RT is an InGaAs video camera featuring high-sensitivity and wide dynamic range. It provides real-time daylight to low-light imaging in the Short Wave Infrared (SWIR) wavelength spectrum for persistent surveillance, laser detection, and penetration through fog, dust, and smoke. | 03/11/2010 | 85.1 KB |
| Datasheet: SU320KTX High Sensitivity-Shortwave IR Camera w/ Enhanced Dynamics | The compact SU320KTX-1.7RT is an InGaAs video camera featuring high-sensitivity and wide dynamic range. It provides real-time daylight to low-light imaging in the Short Wave Infrared (SWIR) wavelength spectrum for persistent surveillance, laser detection, and penetration through fog, dust, and smoke. | 03/11/2010 | 85.8 KB |
| Datasheet: Series Q: QP154-Q | Silicon Sensor International AG and Pacific Silicon Sensor Inc. announce a new line of Single and Quadrant Photodiodes (Series Q) optimized for 1064 nm. Fast rise times make these devices well suited for laser range finding, target designation or any application detecting YAG lasers or similar NIR emitters. | 03/09/2010 | 244.6 KB |
| Datasheet: Series Q: QP100-Q | Silicon Sensor International AG and Pacific Silicon Sensor Inc. announce a new line of Single and Quadrant Photodiodes (Series Q) optimized for 1064 nm. Fast rise times make these devices well suited for laser range finding, target designation or any application detecting YAG lasers or similar NIR emitters. | 03/09/2010 | 215.6 KB |
| Datasheet: Series Q: PS100-Q | Silicon Sensor International AG and Pacific Silicon Sensor Inc. announce a new line of Single and Quadrant Photodiodes (Series Q) optimized for 1064 nm. Fast rise times make these devices well suited for laser range finding, target designation or any application detecting YAG lasers or similar NIR emitters. | 03/09/2010 | 239.4 KB |
| Datasheet: Series Q: QP45-Q | Silicon Sensor International AG and Pacific Silicon Sensor Inc. announce a new line of Single and Quadrant Photodiodes (Series Q) optimized for 1064 nm. Fast rise times make these devices well suited for laser range finding, target designation or any application detecting YAG lasers or similar NIR emitters. | 03/09/2010 | 225.8 KB |
| Datasheet: Series Q: QP45-Q | Silicon Sensor International AG and Pacific Silicon Sensor Inc. announce a new line of Single and Quadrant Photodiodes (Series Q) optimized for 1064 nm. Fast rise times make these devices well suited for laser range finding, target designation or any application detecting YAG lasers or similar NIR emitters. | 03/09/2010 | 225.8 KB |
| Datasheet: Series Q: PS100-Q | Silicon Sensor International AG and Pacific Silicon Sensor Inc. announce a new line of Single and Quadrant Photodiodes (Series Q) optimized for 1064 nm. Fast rise times make these devices well suited for laser range finding, target designation or any application detecting YAG lasers or similar NIR emitters. | 03/09/2010 | 239.4 KB |
| Datasheet: Series Q: QP100-Q | Silicon Sensor International AG and Pacific Silicon Sensor Inc. announce a new line of Single and Quadrant Photodiodes (Series Q) optimized for 1064 nm. Fast rise times make these devices well suited for laser range finding, target designation or any application detecting YAG lasers or similar NIR emitters. | 03/09/2010 | 215.6 KB |
| User's Guide: ReflectorCAD Segmented Reflector Design Software | ReflectorCAD® from Breault Research Organization (BRO) is a paradigm-shifting reflector design tool allowing users to make graphical adjustments to the luminous intensity patterns corresponding to individual reflector segments. The program does the rest. | 03/03/2010 | 839.1 KB |
| What Is Micro-Molding? | There seems to be a lot of talk these days about micromolding. This reflects the increased interest from designers and manufacturers in producing and procuring high precision, micro-featured plastic parts. | 03/03/2010 | 148.6 KB |
| Article: The Prototyping Challenges With Micro Molding | As you’ve no doubt seen, the demand for high tech gadgets has grown exponentially over the recent years. With it also came the demand for today’s electronics to do more in less space. Along with this came pressures and expectations for manufacturing to follow suit. From this need, processes like micro-molding were born. Known injection molding standards and techniques were being challenged to produce smaller, more complicated and tighter toleranced parts and components. And as the demand for micro-molded plastic parts grew so did the expectations on the technology. This article discusses the various methods, challenges, and variables for prototyping micro-sized and/or micro-featured plastic parts. | 03/02/2010 | 467.0 KB |
| Datasheet: InGaAs Avalanche Photodiode IAG-Series | Laser Components new XXL InGaAs APDs, part of the IAG Series InGaAs Avalanche Photodiodes, exhibit a high damage threshold of >200 kW/cm². The responsivity of the detector peaks at 1550 nm and the active area is available in diameters of 80 µm, 200 µm, and 350 µm. | 02/22/2010 | 499.2 KB |
| Datasheet: High Speed High Gain Si Avalanche Photodiodes (AD500-8 TO52S1) | Featuring high speed and high gain, these High Speed High Gain Si Avalanche Photodiodes from Silicon Sensor International are designed for applications such us distance measurement, laser scanning, optical communications, etc. These High Speed High gain APDs also feature low-temperature coefficient, fast rise-time, low-bias operation, and low capacitance. | 02/16/2010 | 763.6 KB |
| Datasheet: High Speed High Gain Si Avalanche Photodiodes (AD230-8 TO52S3) | Featuring high speed and high gain, these High Speed High Gain Si Avalanche Photodiodes from Silicon Sensor International are designed for applications such us distance measurement, laser scanning, optical communications, etc. These High Speed High gain APDs also feature low-temperature coefficient, fast rise-time, low-bias operation, and low capacitance. | 02/16/2010 | 744.3 KB |
| Datasheet: High Speed High Gain Si Avalanche Photodiodes (AD230-8 TO52S1) | Featuring high speed and high gain, these High Speed High Gain Si Avalanche Photodiodes from Silicon Sensor International are designed for applications such us distance measurement, laser scanning, optical communications, etc. These High Speed High gain APDs also feature low-temperature coefficient, fast rise-time, low-bias operation, and low capacitance. | 02/16/2010 | 750.2 KB |